Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Y S Lelikov"'
Autor:
I. A. Sheremet, D. V. Tarkhin, V. Y. Davydov, Alexander N. Smirnov, Y. G. Shreter, N. I. Bochkareva, Andrey Leonidov, Y. S. Lelikov, M. V. Virko, F. E. Latishev, Andrey Zubrilov, Vladislav Voronenkov, A. V. Pinchuk, V. S. Kogotkov, R. I. Gorbunov
Publikováno v:
Semiconductors. 51:115-121
The intense absorption of CO2 laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dd163bc24aa758a9276a2a7b12da5d0
https://doi.org/10.1134/s1063782617010249
https://doi.org/10.1134/s1063782617010249
Autor:
Vladislav Voronenkov, Andrey Zubrilov, Ruslan Gorbunov, Philippe Latyshev, Natalia Bochkareva, Y. S. Lelikov, Y. T. Rebane, Yuriy Shreter, Alexander Tsyuk
Publikováno v:
ECS Transactions. 35:91-97
GaN is widely used in emerging solid state lighting industry, blue lasers, power and RF electronics. Due to the lack of native substrates, most GaN devices are grown on sapphire. Lattice constant in c-plane of GaN and sapphire differs by 14%. High la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c27ed684ed9981d1d42a88fa2d21fa7a
https://doi.org/10.1149/1.3570850
https://doi.org/10.1149/1.3570850
Autor:
Alexander Tsyuk, N. I. Bochkareva, Y. T. Rebane, Y. G. Shreter, Y. S. Lelikov, R. I. Gorbunov, F. E. Latyshev, Vladislav Voronenkov, Andrey Zubrilov
Publikováno v:
Semiconductors. 44:794-800
The quantum efficiency of GaN LED structures has been studied at various temperatures and biases. It was found that an efficiency falloff is observed with increasing current density and, simultaneously, the tunnel component of the current through the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cda19b911665dc515f63deb3443d1e7d
https://doi.org/10.1134/s1063782610060175
https://doi.org/10.1134/s1063782610060175
Autor:
A. V. Klochkov, Y. T. Rebane, Yury Georgievich Shreter, Y. S. Lelikov, R. I. Gorbunov, A. I. Tsyuk, A. L. Bogatov, N. I. Bochkareva, F. E. Latyshev, Andrey Zubrilov
Publikováno v:
Semiconductors. 43:1499-1505
Comparative study of the photoluminescence (PL) from quantum wells (QWs) in forward-biased p-GaN/InGaN/n-GaN structures and electroluminescence from these structures has been carried out. It is shown that, upon application of a forward bias, a charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cd8a5dbc839527170c64f6456af0820
https://doi.org/10.1134/s1063782609110177
https://doi.org/10.1134/s1063782609110177
Autor:
Y. T. Rebane, Vladislav Voronenkov, Alexander Tsyuk, Natalia Bochkareva, Ruslan Gorbunov, Yuriy Shreter, Philippe Latyshev, Andrey Zubrilov, Y. S. Lelikov
Publikováno v:
ECS Meeting Abstracts. :1474-1474
The effect of growth parameters on stress in thick GaN films grown on sapphire by HVPE method was investigated. We have found two modes of growth with different growth stress. Films grown in one mode have rough surfaces and low stress. The second mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::600a0e35bab88065850a62248190182f
https://doi.org/10.1149/ma2011-01/24/1474
https://doi.org/10.1149/ma2011-01/24/1474
Autor:
Alexander Tsyuk, Y. G. Shreter, Natalia Bochkareva, Y. T. Rebane, Vladislav Voronenkov, Ruslan Gorbunov, Philippe Latyshev, Y. S. Lelikov, Andrey Zubrilov
Publikováno v:
Applied Physics Letters. 96:133502
The quantum efficiency of GaN-based light-emitting diodes (LEDs) is investigated at temperatures 77–300 K. It is found that the efficiency droop is due to a decrease in the internal quantum efficiency (IQE) in the low-energy part of the emission sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8197d9d923696db55a4840f45103461a
https://doi.org/10.1063/1.3367897
https://doi.org/10.1063/1.3367897
Autor:
V V Voronenkov, A A Leonidov, N I Bochkareva, R I Gorbunov, P E Latyshev, Y S Lelikov, V S Kogotkov, A S Zubrilov, Y G Shreter
Publikováno v:
Journal of Physics: Conference Series; 2019, Vol. 1199 Issue 1, p1-1, 1p