Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Y P Khosia"'
Publikováno v:
Semiconductor Science and Technology. 8:1679-1681
29Si+ implantation in InP:Fe was performed at room temperature with an energy of 150 keV at 1*1014 cm-2. Face-to-face proximity furnace annealing was done at 750 degrees C for 15 min in flowing N2 and H2. Investigations were made by measuring differe