Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Y Mizokawa"'
Autor:
T Tabata, Motoaki Adachi, Ryuichiro Oshima, Hiroyuki Sasakura, Shigeki Tsukui, Y Mizokawa, Ken-ichi Yoshida
Publikováno v:
Physica C: Superconductivity. 377:101-106
Preparation of Bi2(LnxCa2−x)Ca2Cu3Oz thin films (0.3⩽x⩽0.7, Ln=Pr, Nd, Sm, Eu and Gd) by the laser ablation method and their physical properties are described. These films have been of a metastable Bi-2223 phase, which had not been synthesized
Publikováno v:
Physica B: Condensed Matter. :502-505
Equilibrium concentration of vacancies under the anisotropic stress field around an impurity is investigated. The anisotropy of the work by anisotropic stress is considered. Threshold change of equilibrium concentration of vacancies corresponding to
Publikováno v:
Physica C: Superconductivity. 361:189-194
We have prepared Bi-2201 thin films of Bi2LnxCa2−xCu1Oz systems (Ln=La, Pr, Nd, Sm, Eu and Gd) by the laser ablation method. In the Bi2LaxCa2−xCu1Oz system, the Bi-2201 films have been obtained in a wide composition range of 0.4≦x≦0.8, and th
Publikováno v:
Physical Review B. 61:11332-11335
A systematic study on the nature of Pr doping in ${\mathrm{Bi}}_{2}{\mathrm{Pr}}_{x}{\mathrm{Ca}}_{3\ensuremath{-}x}{\mathrm{Cu}}_{2}{\mathrm{O}}_{8+\ensuremath{\delta}}(0.2l~xl~0.6)$ has been made on films grown by laser ablation. These films are a
Publikováno v:
Journal of Crystal Growth. 210:45-48
Behavior of point defects under thermal stress in growing Czochralski (CZ) silicon is theoretically examined. The changes in point defect concentration by the thermal stress depending on the growth rate are quantitatively estimated, and their contrib
Publikováno v:
Physica C: Superconductivity. 329:292-297
The Bi-2212 thin films of the Bi2Ln0.3Ca2.7Cu2Oz system (Ln=Pr, Nd, Sm, Eu and Gd) have been prepared by the laser ablation method. The films are of metastable Bi-2212 phase, which has not been synthesized by the solid state reaction method. The high
Autor:
Y Mizokawa, Tohru Matsui, N Manabe, T Manda, M Kitagawa, H Imai, K Kaya, H Yano, A Suzuki, Takahisa Yamada, Yoshiyuki Sasaki
Publikováno v:
Nihon Chikusan Gakkaiho. 71:459-469
Publikováno v:
Physica B: Condensed Matter. :493-496
Behavior of point defects under the internal stress in a growing Czochralski (CZ) silicon is theoretically examined. The changes of point defect concentration by the impurity doping and by the thermal stress are quantitatively estimated. Contribution
Publikováno v:
Physica C: Superconductivity. 322:25-30
We have synthesized new layered Bi-cuprate thin films of Bi2(La,Ca)2Can−1CunOz (n=3, 4, 5, 6 and 7) by the laser ablation method. These materials are metastable phases that have not been synthesized by standard solid state reaction method. The latt
Publikováno v:
Physica C: Superconductivity. 320:115-119
We have synthesized Bi-2212 thin films of Bi 2 La x Ca 3− x Cu 2 O z with the composition range of 0.2≤ x ≤0.7 by the laser ablation method. Bi-2212 samples with the same range of composition have not been obtained by solid state reaction excep