Zobrazeno 1 - 10
of 188
pro vyhledávání: '"Y M, Niquet"'
Autor:
F. T. Armand Pilon, A. Lyasota, Y.-M. Niquet, V. Reboud, V. Calvo, N. Pauc, J. Widiez, C. Bonzon, J. M. Hartmann, A. Chelnokov, J. Faist, H. Sigg
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
Germanium (based) lasers are a promising route towards a fully CMOS-compatible light source, key to the further development of silicon photonics. Here, the authors realize lasing from strained germanium microbridges up to 100 K, finding a quantum eff
Externí odkaz:
https://doaj.org/article/d5eb7b334da04a17bdb97efaf5799180
Autor:
F. T. Armand Pilon, Y-M. Niquet, J. Chretien, N. Pauc, V. Reboud, V. Calvo, J. Widiez, J. M. Hartmann, A. Chelnokov, J. Faist, H. Sigg
Publikováno v:
Physical Review Research, Vol 4, Iss 3, p 033050 (2022)
Efficient and cost-effective Si-compatible lasers are a longstanding wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the integratio
Externí odkaz:
https://doaj.org/article/0aa19fe0b7e04df7bffa2fa518658e9b
Autor:
V. Ranjan, B. Albanese, E. Albertinale, E. Billaud, D. Flanigan, J. J. Pla, T. Schenkel, D. Vion, D. Esteve, E. Flurin, J. J. L. Morton, Y. M. Niquet, P. Bertet
Publikováno v:
Physical Review X, Vol 11, Iss 3, p 031036 (2021)
Electron spins are amongst the most coherent solid-state systems known. However, to be used in devices for quantum sensing and information processing applications, they must typically be placed near interfaces. Understanding and mitigating the impact
Externí odkaz:
https://doaj.org/article/94fac58797d6477084e22b27f0c4f86d
Publikováno v:
Phys.Rev.B
Phys.Rev.B, 2023, 107 (4), pp.L041303. ⟨10.1103/PhysRevB.107.L041303⟩
Phys.Rev.B, 2023, 107 (4), pp.L041303. ⟨10.1103/PhysRevB.107.L041303⟩
International audience; We consider a spin circuit-QED device where a superconducting microwave resonator is capacitively coupled to a single hole confined in a semiconductor quantum dot. Thanks to the strong spin-orbit coupling intrinsic to valence-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0ea8a16b5fb217155071c9d0b14afc2
https://hal.science/hal-03958074
https://hal.science/hal-03958074
Autor:
L.C. Contamin, B. Cardoso Paz, B. Martinez Diaz, B. Bertrand, H. Niebojewski, V. Labracherie, A. Sadik, E. Catapano, M. Casse, E. Nowak, Y.-M. Niquet, F. Gaillard, T. Meunier, P.-A. Mortemousque, M. Vinet
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5555a03bdbc307c64c073fddefe88795
https://doi.org/10.1109/iedm45625.2022.10019396
https://doi.org/10.1109/iedm45625.2022.10019396
Akademický článek
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Autor:
H. Niebojewski, B. Bertrand, E. Nowak, T. Bedecarrats, B. Cardoso Paz, L. Contamin, P.A. Mortemousque, V. Labracherie, L. Brevard, H. Sahin, J. Charbonnier, C. Thomas, M. Assous, M. Casse, M. Urdampilleta, Y.-M. Niquet, F. Perruchot, F. Gaillard, S. De Franceschi, T. Meunier, M. Vinet
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff2580a7547220dde5490f80887ee233
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830352
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830352
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
N, Piot, B, Brun, V, Schmitt, S, Zihlmann, V P, Michal, A, Apra, J C, Abadillo-Uriel, X, Jehl, B, Bertrand, H, Niebojewski, L, Hutin, M, Vinet, M, Urdampilleta, T, Meunier, Y-M, Niquet, R, Maurand, S De, Franceschi
Publikováno v:
Nature nanotechnology. 17(10)
Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitations, allowing for practical, fast and potentially scalable qubit control. Spin electric susceptibility, however, renders these qubits generally vulnerable t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::a251ddbb8391f56ea0883bab99519617
https://pubmed.ncbi.nlm.nih.gov/36138200
https://pubmed.ncbi.nlm.nih.gov/36138200
Autor:
M. Vinet, T. Bedecarrats, B. Cardoso Paz, B. Martinez, E. Chanrion, E. Catapano, L. Contamin, L. Pallegoix, B. Venitucci, V. Mazzocchi, H. Niebojewski, B. Bertrand, N. Rambal, C. Thomas, J. Charbonnier, P.-A. Mortemousque, J.-M. Hartmann, E. Nowak, Y. Thonnart, G. Billiot, M. Casse, M. Urdampilleta, Y.-M. Niquet, F. Perruchot, S. De Franceschi, T. Meunier
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc6229c3502f66a5a1fa4071267e31ce
https://doi.org/10.1109/iedm19574.2021.9720708
https://doi.org/10.1109/iedm19574.2021.9720708