Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Y G Shreter"'
Autor:
I. A. Sheremet, D. V. Tarkhin, V. Y. Davydov, Alexander N. Smirnov, Y. G. Shreter, N. I. Bochkareva, Andrey Leonidov, Y. S. Lelikov, M. V. Virko, F. E. Latishev, Andrey Zubrilov, Vladislav Voronenkov, A. V. Pinchuk, V. S. Kogotkov, R. I. Gorbunov
Publikováno v:
Semiconductors. 51:115-121
The intense absorption of CO2 laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dd163bc24aa758a9276a2a7b12da5d0
https://doi.org/10.1134/s1063782617010249
https://doi.org/10.1134/s1063782617010249
Autor:
Y. G. Shreter, Vladislav Voronenkov, Andrey Zubrilov, Ruslan Gorbunov, Andrey Leonidov, Yuri Lelikov, Natalia Bochkareva, V. S. Kogotkov, Philippe Latyshev
Publikováno v:
2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).
Gallium Nitride substrates are crucial for the production of reliable GaN-based devices with high current density: light emitting diodes and lasers, high-voltage diodes and transistors, and microwave high electron mobility transistors. However, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e0c02e808f9a5c829f9413f8c3664ed
https://doi.org/10.1109/cleoe-eqec.2019.8871587
https://doi.org/10.1109/cleoe-eqec.2019.8871587
Autor:
Andrey Leonidov, Yuri Lelikov, V. S. Kogotkov, Philippe Latyshev, Y. G. Shreter, Andrey Zubrilov, Natalia Bochkareva, Ruslan Gorbunov, Vladislav Voronenkov
Publikováno v:
2019 Compound Semiconductor Week (CSW).
A HVPE reactor for growth of bulk GaN epitaxial layers with a diameter of 50 mm was developed. High-capacity external halide precursor sources for gallium, aluminum and boron allow non-stop growth of bulk GaN layers with a thickness of 10 mm and high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f144419f2f2cff36803c9cf9b282a1c7
https://doi.org/10.1109/iciprm.2019.8819335
https://doi.org/10.1109/iciprm.2019.8819335
Autor:
Horst P. Strunk, N. I. Bochkareva, Y. T. Rebane, Y. G. Shreter, U. W. Popp, Yuri Lelikov, A. I. Tsyuk, Philipp Latyshev, M. Strafela, Andrey Zubrilov, Vladislav Voronenkov, R. I. Gorbunov
GaN films with thickness up to 3 mm were grown by halide vapour phase epitaxy method. Two growth modes were observed: the high temperature (HT) mode and the low temperature (LT) mode. Films grown in HT mode had smooth surface, however the growth stre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2d385461d681c81c7c5cce4e4f8e0ea
http://arxiv.org/abs/1902.07164
http://arxiv.org/abs/1902.07164
Autor:
Philipp Latyshev, Alexander Tsyuk, Ruslan Gorbunov, Vladislav Voronenkov, Andrey Zubrilov, Y. G. Shreter, Natalia Bochkareva, Yuri Lelikov, Y.T. Rebane
GaN films with thicknesses up to 3 mm were grown in two custom-made halide vapor phase epitaxy (HVPE) reactors. V-shaped defects (pits) with densities from 1 to 100 cm-2 were found on the surfaces of the films. Origins of pit formation and the proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::486113a34a1750fd74f31c0e94e2952d
http://arxiv.org/abs/1902.06465
http://arxiv.org/abs/1902.06465
Autor:
Andrey Leonidov, Natalia Bochkareva, Philipp Latyshev, Yuri Lelikov, Y. G. Shreter, Ruslan Gorbunov, Vladislav Voronenkov, V. S. Kogotkov, Andrey Zubrilov
A free-standing bulk gallium nitride layer with a thickness of 365 $\mu$m and a diameter of 50 mm was obtained by hydride vapor phase epitaxy on a sapphire substrate with a carbon buffer layer. The carbon buffer layer was deposited by thermal decompo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86b20b6bddb54ca2e7f9fb564e38c44c
http://arxiv.org/abs/1902.04672
http://arxiv.org/abs/1902.04672
Cracking of thick GaN films on sapphire substrates during the cooling down after the growth was studied. The cracking was suppressed by increasing the film-to-substrate thickness ratio and by using an intermediate carbon buffer layer, that reduced th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf5ae268e9e5b6d77326ad71ecabc935
Autor:
Yuri Lelikov, Andrey Zubrilov, Natalia Bochkareva, Y. G. Shreter, Vladislav Voronenkov, Ruslan Gorbunov, Philipp Latyshev
Publikováno v:
physica status solidi (a). 217:1900629
An HVPE reactor for the growth of bulk GaN crystals with a diameter of 50 mm was developed. Growth rate non-uniformity of 1% was achieved using an axisymmetric vertical gas injector with stagnation point flow. Chemically-resistant refractory material
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e80a776738f13b77dec697e070728df9
https://doi.org/10.1002/pssa.201900629
https://doi.org/10.1002/pssa.201900629
Publikováno v:
Journal of Physics: Conference Series. 1410:012004
The chemical resistance of quartz, aluminum oxide, boron nitride, molybdenum, and platinum in the environment of the hydride vapor phase epitaxy of gallium nitride was estimated by chemical equilibrium calculation. The interaction of materials with h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::381dffacf43c7c0d6318fe3729d3acef
https://doi.org/10.1088/1742-6596/1410/1/012004
https://doi.org/10.1088/1742-6596/1410/1/012004
Autor:
V. S. Kogotkov, Andrey Zubrilov, Andrey Leonidov, Yuri Lelikov, Philipp Latyshev, Natalia Bochkareva, Ruslan Gorbunov, Y. G. Shreter, Vladislav Voronenkov
Publikováno v:
Results in Physics, Vol 13, Iss, Pp-(2019)
A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off process did not require any special release layers in the epitaxial st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6aad0474d0615706b99ca7e8adae9411
https://doi.org/10.1016/j.rinp.2019.102233
https://doi.org/10.1016/j.rinp.2019.102233