Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Yūki, Katamune"'
Publikováno v:
Diamond and Related Materials. 134:109789
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11a70164e807885e37c7350b7d0ac1b9
https://doi.org/10.1016/j.diamond.2023.109789
https://doi.org/10.1016/j.diamond.2023.109789
Autor:
Tsuyoshi Yoshitake, Ali Mohamed Ali, Phongsaphak Sittimart, Peerasil Charoenyuenyao, Rawiwan Chaleawpong, Nathaporn Promros, Abdelrahman Zkria, Yūki Katamune, Eslam Abubakr, Satoshi Takeichi, Mohamed Egiza
Publikováno v:
Journal of Nanoscience and Nanotechnology. 20:4884-4891
Coaxial arc plasma deposition (CAPD) was employed to manufacture n-type silicon/boron-doped p-type ultrananocrystalline diamond heterojunctions. Measurement and analysis of their dark current density-voltage curve were carried out at room temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4db7b130f0d3cf1335194613233f8f8d
https://doi.org/10.1166/jnn.2020.17838
https://doi.org/10.1166/jnn.2020.17838
Autor:
Abdelrahman Zkria, Shinya Ohmagari, Yūki Katamune, Tsuyoshi Yoshitake, Eslam Abubakr, Hiroshi Ikenoue, Kaname Imokawa
Publikováno v:
Diamond and Related Materials. 95:166-173
A singlecrystalline diamond (100)(Ib) plate immersed in 2% boric acid was irradiated by 193-nm ArF excimer laser beams for the formation of conductive layers on the surface of an insulating diamond substrate. From current-voltage measurements of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::001afe1aa3d5de3c57a29c2db06e856b
https://doi.org/10.1016/j.diamond.2019.04.013
https://doi.org/10.1016/j.diamond.2019.04.013
Publikováno v:
Thin Solid Films. 677:28-32
Phosphorus-incorporated polycrystalline diamond films were grown on Si substrates by hot-filament chemical vapor deposition using a low-risk organic phosphorus solution as a source gas, similarly to metal-organic chemical vapor deposition. The effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6761f9fc1ffbdb2a5f3284f0cc391dac
https://doi.org/10.1016/j.tsf.2019.03.006
https://doi.org/10.1016/j.tsf.2019.03.006
Autor:
Rawiwan, Chaleawpong, Nathaporn, Promros, Peerasil, Charoenyuenyao, Phongsaphak, Sittimart, Satoshi, Takeichi, Yūki, Katamune, Abdelrahman, Zkria, Eslam, Abubakr, Mohamed, Egiza, Ali Mohamed, Ali, Tsuyoshi, Yoshitake
Publikováno v:
Journal of nanoscience and nanotechnology. 20(8)
Coaxial arc plasma deposition (CAPD) was employed to manufacture n-type silicon/boron-doped p-type ultrananocrystalline diamond heterojunctions. Measurement and analysis of their dark current density-voltage curve were carried out at room temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::0b69efc3f83ebbbdcda68989b34b0e7a
https://pubmed.ncbi.nlm.nih.gov/32126670
https://pubmed.ncbi.nlm.nih.gov/32126670
Publikováno v:
Thin Solid Films. 635:53-57
Silicon carbon nitride (SiCN) is a candidate as underlayer materials for the growth of diamond thin films for hard coating. Diamond thin films were grown on SiCN layers deposited on Si substrates and directly on the Si substrates for comparison, to i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a044af3c5e7624734c0cd90a1139e1b6
https://doi.org/10.1016/j.tsf.2016.12.010
https://doi.org/10.1016/j.tsf.2016.12.010
Publikováno v:
Thin Solid Films. 695:137750
Silicon carbon nitride (SiCN) films were deposited by hot-wire chemical vapor deposition using hexamethyldisilazane (HMDS) as the single source gas diluted in ammonia (NH3) and hydrogen (H2) gas mixtures. The chemical composition of the SiCN films wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7c5563e3b1be9e97386260eadebce52
https://doi.org/10.1016/j.tsf.2019.137750
https://doi.org/10.1016/j.tsf.2019.137750
Publikováno v:
Japanese Journal of Applied Physics. 57:120301
The surface oxidization of Si(100) substrates by oxidizing species generated by the catalytic decomposition of H2O precursors on a heated tungsten wire in a mixed H2O/H2 gas atmosphere was investigated. The formation of Si oxide layers was realized a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53a904e0efa4663ab626ec02af1df59e
https://doi.org/10.7567/jjap.57.120301
https://doi.org/10.7567/jjap.57.120301
Publikováno v:
Japanese Journal of Applied Physics
Carrier transport and photodetection in heterojunction photodiodes comprising n-type Si substrates and p-type B-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were investigated. Their transport model was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8361d9e307f8bfea7eae437204c505d0
https://gfzpublic.gfz-potsdam.de/pubman/item/item_1504311
https://gfzpublic.gfz-potsdam.de/pubman/item/item_1504311
Autor:
Ryota Ohtani, Tsuyoshi Yoshitake, Hiroki Gima, Yūki Katamune, Satoshi Koizumi, Abdelrahman Zkria
Publikováno v:
Applied Physics Express. 10:015801
Nitrogen-doped ultra-nanocrystalline diamond/hydrogenated amorphous carbon composite films prepared in hydrogen and nitrogen mixed-gas atmospheres by coaxial arc plasma deposition with graphite targets were studied electrically and chemical-bonding-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d899334c417e1ddd2dd4dcbead301781
https://doi.org/10.7567/apex.10.015801
https://doi.org/10.7567/apex.10.015801