Zobrazeno 1 - 2
of 2
pro vyhledávání: '"YÅ«ki Katamune"'
Autor:
Kimiyoshi Ichikawa, Takehiro Shimaoka, Daichi Mori, Satoshi Koizumi, YÅ«ki Katamune, Daisuke Arikawa, Akira Izumi
Publikováno v:
Applied Physics A. 126
Epitaxial growth of n-type semiconductor diamond films on (111)-oriented diamond has been achieved by hot-filament chemical vapor deposition (HFCVD) using a methane source and a trimethylphosphine dopant source. Secondary-ion mass spectrometry showed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a15899479141d318d68f1ae93135b9ad
https://doi.org/10.1007/s00339-020-04060-w
https://doi.org/10.1007/s00339-020-04060-w
Autor:
Satoshi Takeichi, Tsuyoshi Yoshitake, Satoshi Koizumi, Kazutaka Kamitani, Ryota Ohtani, YÅ«ki Katamune, Eiji Ikenaga, Takeharu Sugiyama
Publikováno v:
Applied Physics A. 125
Boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by coaxial arc plasma deposition with boron-blended graphite targets. The effects of boron incorporation on the electrical prope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49d0a545ce84a047c3ad03a23ee2d7d9
https://doi.org/10.1007/s00339-019-2607-8
https://doi.org/10.1007/s00339-019-2607-8