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pro vyhledávání: '"Y, Ashizawa"'
Akademický článek
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Akademický článek
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Publikováno v:
Journal of Computational Electronics. 6:49-53
In this paper, we focus on uniaxial and biaxial strain technologies, and we also investigate an optimum combination of strain method and channel direction. We linked the first principles band calculation program to the FUJITSU ensemble full band Mont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fccf4eb01cc0842d97272ec20a0a1bb
https://doi.org/10.1007/s10825-006-0050-5
https://doi.org/10.1007/s10825-006-0050-5
Autor:
Takashi Umeda, H. Matsuda, M. Yotsukura, H Tomomasa, Y. Ashizawa, Y. Adachi, M. Iwabuchi, Ken Takeda, Hirofumi Shimizu, Seiichi Yoshida, T. Iiyama, Y. Tohyama, Shigeru Oshio
Publikováno v:
Archives of Andrology. 53:53-58
The effect of sample collection site on semen parameters in ten men aged between 22 and 24 years was investigated. Sperm was collected at two sites: in a university hospital restroom for general use and in a one-person hospital room. Samples were col
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44da68e1bec294478c645159762db1ed
https://doi.org/10.1080/01485010600908454
https://doi.org/10.1080/01485010600908454
Autor:
Y. Ashizawa, K. Nakagawa
Publikováno v:
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15b00fdd31367f940b92af3cdff1ba33
https://doi.org/10.7567/ssdm.2015.a-2-1
https://doi.org/10.7567/ssdm.2015.a-2-1
Publikováno v:
Journal of Computational Electronics. 5:319-322
Multi-gate devices such as DG (Double Gate), SG (Single Gate) and tri-gate, are extensively examined and expected to be one of the promising device structures beyond bulk MOSFETs. We demonstrate the basic characteristics considering random dopant flu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d8596b3ff71b982236fd9c6564f0d99
https://doi.org/10.1007/s10825-006-0010-0
https://doi.org/10.1007/s10825-006-0010-0
Publikováno v:
Journal of Physics: Condensed Matter. 18:4879-4886
We performed first principles calculations to study the As–vacancy interaction and the ring mechanism of diffusion in the presence of Ge in Si in neutral and positively charged states. We discovered that the vacancy barrier decreases substantially
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fabe8f3f3859fb6ba7eacfcf3ee2c6b2
https://doi.org/10.1088/0953-8984/18/20/012
https://doi.org/10.1088/0953-8984/18/20/012
Publikováno v:
Journal of Computational Electronics. 3:387-391
In this paper, we describe the analysis of strained-Si device including quantum effect. We linked the first principle band calculation program to the FUJITSU ensemble full band Monte Carlo simulator FALCON directly, which enables to take in arbitrary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1863e6211e533a13efcc96d41370b6bc
https://doi.org/10.1007/s10825-004-7082-5
https://doi.org/10.1007/s10825-004-7082-5
Autor:
M. Iwabuchi, Y. Adachi, H. Matsuda, Seiichi Yoshida, Ken Takeda, Y. Tohyama, Takashi Umeda, H Tomomasa, Y. Ashizawa, M. Yotsukura, Shigeru Oshio
Publikováno v:
Archives of Andrology. 50:417-425
Individual variation in semen parameters was investigated in healthy young volunteers. Semen samples were collected approximately once a month over a one-year period for a total of 93 samples (5 to 10 samples per subject) from 12 volunteers in their
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85f5e18e5dc0b14bddb47ead96aa170c
https://doi.org/10.1080/01485010490485759
https://doi.org/10.1080/01485010490485759
Akademický článek
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