Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Xusheng Lin"'
Publikováno v:
Sensors, Vol 24, Iss 17, p 5720 (2024)
In recent years, artificial intelligence technology has seen increasingly widespread application in the field of intelligent manufacturing, particularly with deep learning offering novel methods for recognizing geometric shapes with specific features
Externí odkaz:
https://doaj.org/article/04cc6de9ce1e4a4cb0f58b526afdf170
Autor:
Jianfeng Lin, Guomei He, Jiangxi Chen, Xusheng Lin, Yuanting Cai, Yuhui Hua, Qin Lin, Weiwei Xie
Publikováno v:
Polymer Chemistry. 12:3375-3382
Metal-containing polymers have drawn considerable interest because of their unexpected and fantastic properties, and can be applied for preparing functional hydrogels. However, covalently cross-linked metal-containing polymer hydrogels have been rare
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b07efb43d692e940e1b80e1614c81ae1
https://doi.org/10.1039/d1py00404b
https://doi.org/10.1039/d1py00404b
Publikováno v:
China Communications. 15:58-67
With the development of manufacture technology, the multi-level cell (MLC) technique dramatically increases the storage density of NAND flash memory. As the result, cell-to-cell interference (CCI) becomes more serious and hence causes an increase in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23ea2f535baf62a045c482f6529ee25d
https://doi.org/10.1109/cc.2018.8398504
https://doi.org/10.1109/cc.2018.8398504
Publikováno v:
2016 IEEE International Conference on Consumer Electronics-China (ICCE-China).
With the development of manufacture technology, the multi-level cell (MLC) technique dramatically increases the storage density of NAND flash memory. As the result, cell-to-cell interference (CCI) becomes more serious and hence causes an increase in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::247e99dc6da6700ca79e0e9f36c5606f
https://doi.org/10.1109/icce-china.2016.7849731
https://doi.org/10.1109/icce-china.2016.7849731
Publikováno v:
ICICS
With continued scaling down of the NAND flash memory, the multi-level cell (MLC) technique emerges to dramatically increase the storage density. Meanwhile, this technique also leads to worse error performance owing to the cell-to-cell interference (C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca40534e2513cb1d8131d4bd5c2df05d
https://doi.org/10.1109/icics.2015.7459823
https://doi.org/10.1109/icics.2015.7459823
Publikováno v:
Volume 3: Nuclear Safety and Security; Codes, Standards, Licensing and Regulatory Issues; Computational Fluid Dynamics and Coupled Codes.
The severe accident simulation codes that developed by the engineers in RINPO are introduced in this chapter. The results of the severe accident caused by large LOCA plus losing safety core injection are presented. Comparison with the results of SCDA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5618e2910ee0ec3b269a2be250f7b2cd
https://doi.org/10.1115/icone21-16058
https://doi.org/10.1115/icone21-16058
Publikováno v:
Optical Engineering. 54:025102
Improving the coupling efficiency of tapered metallic gaps using spatial amplitude modulation is theoretically investigated. The influences of the critical parameters on the coupling efficiency, such as incident beam width, incident wavelength, and n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05953fd96f82714ef72239c538c2ab61
https://doi.org/10.1117/1.oe.54.2.025102
https://doi.org/10.1117/1.oe.54.2.025102
Publikováno v:
Journal of Physics D: Applied Physics. 48:065103
We numerically study a novel scheme to improve the field enhancement of 2D hollow tapered waveguides (HTWs). A dielectric microcylinder is embedded into a metal?insulator?metal (MIM) HTW for resonant exciting gap surface plasmons (GSPs), which is dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f1819ab46d5d43ea7e1c21661995e34
https://doi.org/10.1088/0022-3727/48/6/065103
https://doi.org/10.1088/0022-3727/48/6/065103
Publikováno v:
Journal of Physics D: Applied Physics; 2/18/2015, Vol. 48 Issue 6, p1-1, 1p
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