Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Xunyan Lv"'
Autor:
Chen Jin, Jinyu Xiao, Jinming Hou, Han Jiang, Jinxuan Zhang, Xunyan Lv, Wei Sun, Haiyang Jiang, Ershun Du, Yuchen Fang, Yuanbing Zhou, Xunpeng Shi
Publikováno v:
Energy Reports, Vol 8, Iss , Pp 13900-13913 (2022)
In order to achieve carbon neutrality in a few decades, the clean energy proportion in power mix of China will significantly rise to over 90%. A consensus has been reached recently that it will be of great significance to promote hydrogen energy, tha
Externí odkaz:
https://doaj.org/article/0efc7ca2d19f4a24bfe781c2b0ac51e4
Autor:
Rujun Sun, Guoan Ren, Ming Zhao, Xiao Peng, Xunyan Lv, Yaowei Wei, Daming Zhuang, Yixuan Wu, Leng Zhang
Publikováno v:
Vacuum. 152:184-187
Cu-rich CIGS thin films were prepared from quaternary CIGS and Cu target, and then converted into Cu-poor CIGS by depositing the Ga2Se3 layer on the Cu-rich CIGS with the subsequent annealing. In this paper, we name the process of converting Cu-rich
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d76162a591643dee1b231dd5643655fe
https://doi.org/10.1016/j.vacuum.2018.02.035
https://doi.org/10.1016/j.vacuum.2018.02.035
Autor:
Yixuan Wu, Guoan Ren, Ming Zhao, Rujun Sun, Xiao Peng, Xunyan Lv, Yaowei Wei, Leng Zhang, Daming Zhuang
Publikováno v:
Applied Surface Science. 442:308-312
We reported a new method to fabricate submicron-thick CIGS with smooth surface by sputtering In2Se3, CuGaSe2 and Cu2Se targets with post-selenization. The influence of gallium content on the properties of CIGS thin film was evaluated by the crystalli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dd34d02fbced2b85bf791afa91a4718
https://doi.org/10.1016/j.apsusc.2018.02.172
https://doi.org/10.1016/j.apsusc.2018.02.172
Autor:
Xiao Peng, Daming Zhuang, Ming Zhao, Yixuan Wu, Rujun Sun, Leng Zhang, Yaowei Wei, Xunyan Lv, Guoan Ren
Publikováno v:
Applied Surface Science. 434:452-455
The sputtering with post-selenization technique is a promising process for large-scale manufacturing of Cu(In,Ga)Se2 (CIGS) thin films, where the composition of precursors is important to obtaining CIGS thin films with high quality. We use the CuInSe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16909bf982d70a5ecb9b659f6fe7d65a
https://doi.org/10.1016/j.apsusc.2017.10.139
https://doi.org/10.1016/j.apsusc.2017.10.139
Autor:
Leng Zhang, Yaowei Wei, Yixuan Wu, Daming Zhuang, Guoan Ren, Ming Zhao, Xiao Peng, Rujun Sun, Xunyan Lv
Publikováno v:
Vacuum. 146:282-286
H 2 Se gas is able to enhance the grain size of CuInSe 2 near the surface and have limited effects on the grains inside the thin films. The thickness of the high qualified crystal layer (HQCL) near the surface has connection with Cu content of the th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60d37cb6c4efe1f3a572f28570d527a3
https://doi.org/10.1016/j.vacuum.2017.09.052
https://doi.org/10.1016/j.vacuum.2017.09.052
Autor:
Li Guo, Yaowei Wei, Xiao Peng, Ming Zhao, Yixuan Wu, Leng Zhang, Rujun Sun, Daming Zhuang, Shilu Zhan, Liangqi Ouyang, Guoan Ren, Xunyan Lv
Publikováno v:
Journal of Alloys and Compounds. 710:172-176
The presence of H 2 Se is important for the growth of the grain size of sputtered CIGS during the selenization. However, the crystallization of the surface CIGS results in the higher density of the local area that suppressed the diffusion of H 2 Se i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a86cff0372512c7faad5bcc71be90fd
https://doi.org/10.1016/j.jallcom.2017.02.016
https://doi.org/10.1016/j.jallcom.2017.02.016
Autor:
Yaowei Wei, Xiao Peng, Yixuan Wu, Liangqi Ouyang, Rujun Sun, Xunyan Lv, Ming Zhao, Daming Zhuang, Guoan Ren, Li Guo, Shilu Zhan, Leng Zhang
Publikováno v:
Journal of Alloys and Compounds. 709:31-35
The residual Cu x Se phase results in shunt leakage paths in Cu-rich Cu(In,Ga)Se 2 (CIGS) which can cause serious degradation in the conversion efficiency. The conductive atom force microscopy(C-AFM) was employed to obtain a direct evidence of shunt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54f336b6d3edf9800bf7d2e2511b40e3
https://doi.org/10.1016/j.jallcom.2017.03.142
https://doi.org/10.1016/j.jallcom.2017.03.142
Autor:
Xunyan Lv, Rujun Sun, Yixuan Wu, Daming Zhuang, Ming Zhao, Leng Zhang, Yaowei Wei, Xiao Peng, Guoan Ren
Publikováno v:
Materials Letters. 212:165-167
Preparing CIGS thin films with grain size above 1 μm based on quaternary CIGS target is difficult, which is a barrier for the further enhancement of CIGS cell efficiency. We proposed a two-stage method to overcome this problem. Cu-rich CIGS thin fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab6d784d5f68ba75ffb2691667d5f77b
https://doi.org/10.1016/j.matlet.2017.10.033
https://doi.org/10.1016/j.matlet.2017.10.033