Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Xunwang Yan"'
Autor:
Dongqiu Zhao, Xiao Tang, Wanyan Xing, Yixin Zhang, Xueying Gao, Mengrui Zhang, Zhengao Xie, Xunwang Yan, Lin Ju
Publikováno v:
Molecules, Vol 29, Iss 13, p 3138 (2024)
Spin-gapless semiconductor (SGS), a class of zero-gap materials with fully spin-polarized electrons and holes, offers significant potential for high-speed, low-energy consumption applications in spintronics, electronics, and optoelectronics. Our firs
Externí odkaz:
https://doaj.org/article/23c1c69275ed433bb6313b818e97c2c3
Autor:
Dongqiu Zhao, Xiao Tang, Wanyan Xing, Yixin Zhang, Xueying Gao, Mengrui Zhang, Zhengao Xie, Xunwang Yan, Lin Ju
Publikováno v:
Molecules; Jul2024, Vol. 29 Issue 13, p1-11, 11p, 6 Graphs
Publikováno v:
Physical Review Applied. 19
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f82d126faffba3ed344381719f94ec87
https://doi.org/10.1103/physrevapplied.19.054094
https://doi.org/10.1103/physrevapplied.19.054094
Autor:
Qinggao Wang, Yanan Tang, Xiwei Zhang, Chaozheng He, Zongxian Yang, Dawei Zhou, Xunwang Yan, Dongwei Ma, Zhansheng Lu
Publikováno v:
Carbon. 105:463-473
Using first-principles calculation, the potential of the very recently synthesized graphene-like C2N monolayers as the single-atom catalyst (SAC) substrates for the 3d transition metal (TM) (Sc to Zn) has been studied. The calculated energies indicat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1be80392a83e3ec7d8a3efe307a9b5ac
https://doi.org/10.1016/j.carbon.2016.04.059
https://doi.org/10.1016/j.carbon.2016.04.059
Publikováno v:
Journal of Semiconductors. 34:083004
The electronic and optical properties of graphene monoxide, a new type of semiconductor material, are theoretically studied by first-principles density functional theory. The calculated band structure shows that graphene monoxide is a semiconductor w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e08741d53df951e045e5ae693a9120f1
https://doi.org/10.1088/1674-4926/34/8/083004
https://doi.org/10.1088/1674-4926/34/8/083004