Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Xunlei Yan"'
Autor:
Wensheng Wei1 weiwensheng287@163.com, Xunlei Yan1
Publikováno v:
Applied Physics A: Materials Science & Processing. Dec2009, Vol. 97 Issue 4, p895-903. 9p. 1 Black and White Photograph, 2 Charts, 3 Graphs.
Publikováno v:
Superlattices and Microstructures. 45:547-554
A kind of modulation doped structure of n-type nanocrystalline hydrogenated silicon (nc-Si:H) film with intrinsic nc-Si:H layer with p-type bulk Si 〈 100 〉 substrate was proposed. The numerical self-consistent solutions of one-dimensional Schrodi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::303c978080224b01f32d0316f4059b48
https://doi.org/10.1016/j.spmi.2009.02.005
https://doi.org/10.1016/j.spmi.2009.02.005
Autor:
Wensheng Wei, Xunlei Yan
Publikováno v:
Vacuum. 83:787-791
Structural properties of boron doped hydrogenated nanocrystalline silicon films deposited by plasma enhanced chemical vapor deposition method were mainly characterized with Raman and X-ray diffraction methods. The experimental Raman data were fitted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::836f7c74fc6196437d150fe355b5aaa3
https://doi.org/10.1016/j.vacuum.2008.07.006
https://doi.org/10.1016/j.vacuum.2008.07.006