Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Xujun Su"'
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-7 (2024)
Abstract The slip systems and motion behavior of dislocations induced by nano-indentation technique in GaN-based LDs were investigated. Dislocations with burgers vector of b = 1/3 were introduced on either {11 $$\overline{2}$$ 2 ¯ 2} , or {1 $$\over
Externí odkaz:
https://doaj.org/article/1a016f3b82bb416cbdd1ab13ccfbaabf
Autor:
Miao Cui, Yuhao Zhu, Pingyu Cao, Ang Li, Qinglei Bu, Ivona Z. Mitrovic, Xujun Su, Yinchao Zhao, Huiqing Wen, Wen Liu, Cezhou Zhao
Publikováno v:
IET Power Electronics, Vol 16, Iss 9, Pp 1582-1594 (2023)
Abstract This paper presents a monolithic GaN driver with a deadtime generator (DTG) for half‐bridge DC‐DC buck converters. The proposed GaN integrated circuits (ICs) were fabricated in a 3 µm enhancement‐mode GaN MIS‐HEMTs process. The inte
Externí odkaz:
https://doaj.org/article/c85fa31d45244f0e9bb617d51314b44d
Publikováno v:
World Electric Vehicle Journal, Vol 15, Iss 6, p 234 (2024)
Path planning for an unmanned vehicle in an off-road uncertain environment is important for navigation safety and efficiency. Regarding this, a global improved A* algorithm is presented. Firstly, based on remote sensing images, the artificial potenti
Externí odkaz:
https://doaj.org/article/70c41bc575b2406d92d0303bf3a0b261
Autor:
Jiahui Zhang, Xujun Su, Yutao Cai, Didi Li, Luhua Wang, Jingjing Chen, Xionghui Zeng, Jianfeng Wang, Ke Xu
Publikováno v:
AIP Advances, Vol 12, Iss 4, Pp 045111-045111-6 (2022)
The passivation interfaces of GaN-based MIS-HEMTs with Si3N4 and ZrO2/Si3N4 bilayers were investigated through atomic resolution scanning transmission electron microscope–energy dispersive spectroscopy–differential phase contrast microscopy metho
Externí odkaz:
https://doaj.org/article/efdfbf9b1eb2406d84260ce9d7643ed5
Autor:
Xuan Li, Jianping Liu, Xujun Su, Siyi Huang, Aiqin Tian, Wei Zhou, Lingrong Jiang, Masao Ikeda, Hui Yang
Publikováno v:
Materials, Vol 14, Iss 8, p 1877 (2021)
We have improved the material quality of the high indium composition InGaN/GaN multiple quantum wells (MQWs) grown on free-standing GaN substrates using the graded-indium-content superlattice. We found that by adopting a graded-indium-content superla
Externí odkaz:
https://doaj.org/article/0d9da070a02d48d78b4c2761fe0f9b39
Publikováno v:
Materials Research Express, Vol 7, Iss 2, p 025039 (2020)
The crystalline quality of traditional epitaxy is hampered by the lattice and thermal mismatch of epilayer and substrate. Van der Waals epitaxy (vdWE) allows the epilayer to show no excessive strain and results in low defects density. Here, the multi
Externí odkaz:
https://doaj.org/article/dcef8069abfb42a4801023c0a6662c31
Autor:
Yuning Wang, Yipu Qu, Yu Xu, Didi Li, Zhengqian Lu, Jianjie Li, Xujun Su, Guobin Wang, Lin Shi, Xionghui Zeng, Jianfeng Wang, Bing Cao, Ke Xu
Publikováno v:
ACS Nano. 17:4023-4033
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47981f2344e26d243ba439aa8f60315f
https://doi.org/10.1021/acsnano.3c00026
https://doi.org/10.1021/acsnano.3c00026
Autor:
Tengkun Li, Guoqiang Ren, Xujun Su, Kaihe Xie, Zhenghui Xia, Xiaodong Gao, Jianfeng Wang, Ke Xu
Publikováno v:
CrystEngComm. 24:8525-8530
The evolution of pit-type defects in the Am-GaN growth of GaN on HVPE-GaN is investigated in this paper.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12037da70cf69883aa0645c5162d668f
https://doi.org/10.1039/d2ce01332k
https://doi.org/10.1039/d2ce01332k
Autor:
Zhiming Shi, Aiqin Tian, Xiaojuan Sun, Xuan Li, Hang Zang, Xujun Su, Hao Lin, Peng Xu, Hui Yang, Jianping Liu, Dabing Li
Publikováno v:
Journal of Applied Physics. 133:123103
Trench defects, resulting in low emission efficiency in green and longer spectrum ranges, are widely observed in III-nitride alloy multiple quantum wells (MQWs), particularly in those with high indium content. There is a lack of understanding of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25005442d1950f91545518e021b540df
https://doi.org/10.1063/5.0136104
https://doi.org/10.1063/5.0136104
Autor:
Mingyue Wang, Zongyao Li, Xujun Su, Jianfeng Wang, Ke Xu, Chao Jin, Yu Xu, Demin Cai, Xiaojian Hu, Yumin Zhang
Publikováno v:
Materials Letters. 249:25-28
The thermal annealing process is widely used in the growth and subsequent process of GaN, but the mechanism of thermal decomposition is unclear. A series of GaN templates were annealed at 1040 °C for different time. It is found that dislocations pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4dcb85760b0a8a914e41175cf9ac8cb
https://doi.org/10.1016/j.matlet.2019.04.060
https://doi.org/10.1016/j.matlet.2019.04.060