Zobrazeno 1 - 10
of 335
pro vyhledávání: '"Xueying Zhan"'
Autor:
Marshet Getaye Sendeku, Karim Harrath, Fekadu Tsegaye Dajan, Binglan Wu, Sabir Hussain, Ning Gao, Xueying Zhan, Ying Yang, Zhenxing Wang, Chen Chen, Weiqiang Liu, Fengmei Wang, Haohong Duan, Xiaoming Sun
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-12 (2024)
Abstract Steering on the intrinsic active site of an electrode material is essential for efficient electrochemical biomass upgrading to valuable chemicals with high selectivity. Herein, we show that an in-situ surface reconstruction of a two-dimensio
Externí odkaz:
https://doaj.org/article/bd4c569fd7b14d1a9b0b0685185790f0
Autor:
Junjun Wang, Feng Wang, Zhenxing Wang, Ruiqing Cheng, Lei Yin, Yao Wen, Yu Zhang, Ningning Li, Xueying Zhan, Xiangheng Xiao, Liping Feng, Jun He
Publikováno v:
Advanced Science, Vol 6, Iss 11, Pp n/a-n/a (2019)
Abstract Barriers that charge carriers experience while injecting into channels play a crucial role on determining the device properties of van der Waals semiconductors (vdWS). Among various strategies to control these barriers, inserting a graphene
Externí odkaz:
https://doaj.org/article/c8af5f31bcde465992be67e9af6f36b7
Autor:
Yanrong Wang, Yuchen Cai, Feng Wang, Jia Yang, Tao Yan, Shuhui Li, Zilong Wu, Xueying Zhan, Kai Xu, Jun He, Zhenxing Wang
Publikováno v:
Nano Letters. 23:4524-4532
Autor:
Zilong Wu, Yuhan Zhu, Feng Wang, Chuyun Ding, Yanrong Wang, Xueying Zhan, Jun He, Zhenxing Wang
Publikováno v:
Nano Letters. 22:7094-7103
Two-dimensional semiconductors have great potential for beyond-silicon electronics. However, because of the lack of controllable doping methods, Fermi level pinning, and van der Waals (vdW) gaps at the metal-semiconductor interfaces, these devices ex
Autor:
Peng Yu, Jun Meng, Fengmei Wang, Marshet Getaye Sendeku, Binglan Wu, Xinyu Sui, Ning Gao, Xueying Zhan, Xiaoding Lou, Zhenxing Wang, Jun He
Publikováno v:
The Journal of Physical Chemistry C. 126:10367-10377
Autor:
Tao Yan, Yuchen Cai, Yanrong Wang, Jia Yang, Shuhui Li, Xueying Zhan, Fengmei Wang, Ruiqing Cheng, Feng Wang, Jun He, Zhenxing Wang
Publikováno v:
Science China Information Sciences. 66
Autor:
Fekadu Tsegaye Dajan, Marshet Getaye Sendeku, Binglan Wu, Ning Gao, Eyaya Fekadie Anley, Jing Tai, Xueying Zhan, Zhenxing Wang, Fengmei Wang, Jun He
Publikováno v:
Small.
Autor:
Yuyu Yao, Xueying Zhan, Chuyun Ding, Feng Wang, Yanrong Wang, Jia Yang, Zhenxing Wang, Jun He
Publikováno v:
Nano Research. 15:6736-6742
Publikováno v:
环境与职业医学, Vol 41, Iss 9, Pp 1032-1037 (2024)
BackgroundIn recent years, radiation diagnosis and treatment technology has been increasingly applied and popularized in the medical field, and the status of radiation health protection has attracted widespread attention. ObjectiveTo understand the k
Externí odkaz:
https://doaj.org/article/17a8beba2ac147288bd7b5b3b7a3b627
Publikováno v:
Journal of Orthopaedic Surgery and Research, Vol 19, Iss 1, Pp 1-10 (2024)
Abstract Objectives We conducted a multicenter retrospective analysis to compare the clinical outcomes and complications associated with the posterior-anterior and posterior-only approaches in treating Thoracolumbar Junction (TLJ) Tuberculosis (TB) i
Externí odkaz:
https://doaj.org/article/e84292e0a90046fd82e03c07c56ca925