Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Xuexi Yan"'
Autor:
Mingfeng Liu, Jiantao Wang, Junwei Hu, Peitao Liu, Haiyang Niu, Xuexi Yan, Jiangxu Li, Haile Yan, Bo Yang, Yan Sun, Chunlin Chen, Georg Kresse, Liang Zuo, Xing-Qiu Chen
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-10 (2024)
Abstract Reconstructive phase transitions involving breaking and reconstruction of primary chemical bonds are ubiquitous and important for many technological applications. In contrast to displacive phase transitions, the dynamics of reconstructive ph
Externí odkaz:
https://doaj.org/article/28da3602c2f24ba58ca64983b8fcddec
Autor:
Xuexi Yan, Yixiao Jiang, Qianqian Jin, Tingting Yao, Weizhen Wang, Ang Tao, Chunyang Gao, Xiang Li, Chunlin Chen, Hengqiang Ye, Xiu-Liang Ma
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-7 (2023)
Abstract Incoherent interfaces with large mismatches usually exhibit very weak interfacial interactions so that they rarely generate intriguing interfacial properties. Here we demonstrate unexpected strong interfacial interactions at the incoherent A
Externí odkaz:
https://doaj.org/article/18bc65e17df544b18d0d399e9543a3d0
Autor:
Xuexi Yan, Ang Tao, C.H. Chen, Hengqiang Ye, Yixiao Jiang, Xiang Li, Xiuliang Ma, Chunyang Gao, Tingting Yao
Publikováno v:
Journal of Materials Science & Technology. 107:92-99
Revealing the magnetic coupling nature of boundary defects is crucial for in-depth understanding of the behavior and properties of magnetic materials and devices. Here, magnetite (i.e., Fe3O4) thin films were grown epitaxially on (100) SrTiO3 single-
Autor:
Yuichi Ikuhara, Ang Tao, Tingting Yao, Hiromichi Ohta, Yixiao Jiang, Xiuliang Ma, Xuexi Yan, Lixin Yang, Hengqiang Ye, C.H. Chen
Publikováno v:
Nano Letters. 21:5586-5592
Dislocations often exhibit unique physical properties distinct from those of the bulk material. However, functional applications of dislocations are challenging due to difficulties in the construction of high-performance devices of dislocations. Here
Autor:
Xuexi Yan, Qianqian Jin, Yixiao Jiang, Tingting Yao, Xiang Li, Ang Tao, Chunyang Gao, Chunlin Chen, Xiuliang Ma, Hengqiang Ye
Publikováno v:
ACS applied materialsinterfaces. 14(32)
Crystal defects play an important role in the degradation and failure of semiconductor materials and devices. Direct determination of band gap of defects is a critical step for clarifying how the defects affect the physical properties of semiconducto
Autor:
Shanshan, Chen, Yixiao, Jiang, Tingting, Yao, Ang, Tao, Xuexi, Yan, Fang, Liu, Chunlin, Chen, Xiuliang, Ma, Hengqiang, Ye
Publikováno v:
Micron (Oxford, England : 1993). 163
ε-Fe
Autor:
Xu Yang, Qing Liu, Zhiwei Guo, Xuexi Yang, Kun Li, Bowei Han, Min Zhang, Minying Sun, Limin Huang, Gengxi Cai, Yingsong Wu
Publikováno v:
Breast Cancer Research, Vol 26, Iss 1, Pp 1-14 (2024)
Abstract Background Gene expression profiles in breast tissue biopsies contain information related to chemotherapy efficacy. The promoter profiles in cell-free DNA (cfDNA) carrying gene expression information of the original tissues may be used to pr
Externí odkaz:
https://doaj.org/article/f0a3ffb187b044e9a302547bd8a313d8
Publikováno v:
Frontiers in Veterinary Science, Vol 11 (2024)
Urtica species is an angiosperm plant in the Urticaceae family. It serves as a traditional food and medicinal herb, possessing high nutritional value and various bioactive compounds, including polysaccharides, flavonoids, and polyphenolic compounds.
Externí odkaz:
https://doaj.org/article/9fc6dfc99cf941419b92d193a4d59d0d
Autor:
Xuexi Yan, Yixiao Jiang, Bing Yang, Shangyi Ma, Tingting Yao, Ang Tao, Chunlin Chen, Xiuliang Ma, Hengqiang Ye
Publikováno v:
SSRN Electronic Journal.
Autor:
Ang Tao, Xuexi Yan, C.H. Chen, Hengqiang Ye, Xiuliang Ma, Xiang Li, Hiromichi Ohta, Yixiao Jiang, Tingting Yao, Chunyang Gao, Beibei Qiao
Publikováno v:
Applied Surface Science. 587:151599
La2Ti2O7 has recently received extensive interest due to its attractive ferroelectric and photocatalytic properties. Here, high-quality La2Ti2O7 thin films on (110) SrTiO3 substrates are prepared via oxidation of LaTiO3 thin films that are fabricated