Zobrazeno 1 - 10
of 209
pro vyhledávání: '"Xuetao Gan"'
Autor:
Xutao Zhang, Fanlu Zhang, Ruixuan Yi, Naiyin Wang, Zhicheng Su, Mingwen Zhang, Bijun Zhao, Ziyuan Li, Jiangtao Qu, Julie M. Cairney, Yuerui Lu, Jianlin Zhao, Xuetao Gan, Hark Hoe Tan, Chennupati Jagadish, Lan Fu
Publikováno v:
Light: Science & Applications, Vol 13, Iss 1, Pp 1-9 (2024)
Abstract Highly integrated optoelectronic and photonic systems underpin the development of next-generation advanced optical and quantum communication technologies, which require compact, multiwavelength laser sources at the telecom band. Here, we rep
Externí odkaz:
https://doaj.org/article/58bc0767102942efa035460e4ffcc4b3
Autor:
Qiyu Yang, Zheng-Dong Luo, Huali Duan, Xuetao Gan, Dawei Zhang, Yuewen Li, Dongxin Tan, Jan Seidel, Wenchao Chen, Yan Liu, Yue Hao, Genquan Han
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-10 (2024)
Abstract Two-dimensional (2D) semiconductor-based vertical-transport field-effect transistors (VTFETs) – in which the current flows perpendicularly to the substrate surface direction – are in the drive to surmount the stringent downscaling constr
Externí odkaz:
https://doaj.org/article/7f50bf8669304947898798580467a7f6
Autor:
Manzhang Xu, Hongjia Ji, Lu Zheng, Weiwei Li, Jing Wang, Hanxin Wang, Lei Luo, Qianbo Lu, Xuetao Gan, Zheng Liu, Xuewen Wang, Wei Huang
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-12 (2024)
Abstract Twisted bilayer (TB) transition metal dichalcogenides (TMDCs) beyond TB-graphene are considered an ideal platform for investigating condensed matter physics, due to the moiré superlattices-related peculiar band structures and distinct elect
Externí odkaz:
https://doaj.org/article/6766940853c84fe19617609310a3bd12
Publikováno v:
Opto-Electronic Science, Vol 2, Iss 6, Pp 1-10 (2023)
Graphene and related two-dimensional materials have attracted great research interests due to prominently optical and electrical properties and flexibility in integration with versatile photonic structures. Here, we report an in-fiber photoelectric d
Externí odkaz:
https://doaj.org/article/b4330f8ee25c436292a3e5192ce85de8
Publikováno v:
Opto-Electronic Advances, Vol 6, Iss 9, Pp 1-10 (2023)
The conversion-efficiency for second-harmonic (SH) in optical fibers is significantly limited by extremely weak second-order nonlinearity of fused silica, and pulse pump lasers with high peak power are widely employed. Here, we propose a simple strat
Externí odkaz:
https://doaj.org/article/183b85d507144844a70c71f97b9914ac
Autor:
Yue Wang, Junzhuan Wang, Ruijuan Tian, Jiapeng Zheng, Lei Shao, Bo Liu, Fengqiu Wang, Xuetao Gan, Yi Shi, Xiaomu Wang
Publikováno v:
Research, Vol 7 (2024)
Integrated 2-dimensional (2D) photonic devices such as monolayer waveguide has generated exceptional interest because of their ultimate thinness. In particular, they potentially permit stereo photonic architecture through bond-free van der Waals inte
Externí odkaz:
https://doaj.org/article/3200e16a5a6b44c181ba526e8e4f45bb
Autor:
Wenliang Zhang, Onur Çakıroğlu, Abdullah Al-Enizi, Ayman Nafady, Xuetao Gan, Xiaohua Ma, Sruthi Kuriakose, Yong Xie, Andres Castellanos-Gomez
Publikováno v:
Opto-Electronic Advances, Vol 6, Iss 3, Pp 1-11 (2023)
Paper-based devices have attracted extensive attention due to the growing demand for disposable flexible electronics. Herein, we integrate semiconducting devices on cellulose paper substrate through a simple abrasion technique that yields high-perfor
Externí odkaz:
https://doaj.org/article/4f2e1b263fc346409ffbc78d04912082
Autor:
Ruijuan Tian, Xuetao Gan, Chen Li, Xiaoqing Chen, Siqi Hu, Linpeng Gu, Dries Van Thourhout, Andres Castellanos-Gomez, Zhipei Sun, Jianlin Zhao
Publikováno v:
Light: Science & Applications, Vol 11, Iss 1, Pp 1-10 (2022)
We report a waveguide-integrated BP/MoTe2 PN heterojunction photodetector. It presents ultralow dark currents and high responsivities, which has potentials to develop high-performance on-chip photodetectors for various photonic integrated circuits.
Externí odkaz:
https://doaj.org/article/a9aac91c5d0b4db1aa66d6c969787d30
Autor:
Ruixuan Yi, Xutao Zhang, Chen Li, Bijun Zhao, Jing Wang, Zhiwen Li, Xuetao Gan, Li Li, Ziyuan Li, Fanlu Zhang, Liang Fang, Naiyin Wang, Pingping Chen, Wei Lu, Lan Fu, Jianlin Zhao, Hark Hoe Tan, Chennupati Jagadish
Publikováno v:
Light: Science & Applications, Vol 11, Iss 1, Pp 1-9 (2022)
Abstract Semiconductor nanowires (NWs) could simultaneously provide gain medium and optical cavity for performing nanoscale lasers with easy integration, ultracompact footprint, and low energy consumption. Here, we report III–V semiconductor NW las
Externí odkaz:
https://doaj.org/article/56a25223dbeb4165853e021433a46dcf
High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces
Autor:
Cizhe Fang, Qiyu Yang, Qingchen Yuan, Xuetao Gan, Jianlin Zhao, Yao Shao, Yan Liu, Genquan Han, Yue Hao
Publikováno v:
Opto-Electronic Advances, Vol 4, Iss 6, Pp 1-10 (2021)
The realization of high-Q resonances in a silicon metasurface with various broken-symmetry blocks is reported. Theoretical analysis reveals that the sharp resonances in the metasurfaces originate from symmetry-protected bound in the continuum (BIC) a
Externí odkaz:
https://doaj.org/article/09886b026a464c0cbede9debdd999203