Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Xuerui Niu"'
Autor:
Ling Yang, Hao Lu, Meng Zhang, Xuerui Niu, Chuzhou Shi, Bin Hou, Minhan Mi, Mei Wu, Qing Zhu, Yang Lu, Ling Lv, Kai Cheng, Xiaohua Ma, Yue Hao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 474-480 (2022)
In this paper, the impact of ohmic structure on channel-to-channel (C2C) coupling effect in InAlN/GaN double channel (DC) HEMTs is systematically analyzed and studied. For the un-recessed ohmic structure, the electrons in the upper channel can easily
Externí odkaz:
https://doaj.org/article/d3e3289985ee43ca9419578991dc07c9
Publikováno v:
Remote Sensing, Vol 14, Iss 1, p 215 (2022)
The semantic segmentation of fine-resolution remotely sensed images is an urgent issue in satellite image processing. Solving this problem can help overcome various obstacles in urban planning, land cover classification, and environmental protection,
Externí odkaz:
https://doaj.org/article/26b957dd294f4be8ac659b5656b347a4
Autor:
Fuchun Jia, Xiaohua Ma, Ling Yang, Xinchuang Zhang, Bin Hou, Meng Zhang, Mei Wu, Xuerui Niu, Jiale Du, Siyu Liu, Yue Hao
Publikováno v:
IEEE Electron Device Letters. 43:1400-1403
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4e6587bafa475cdbae2a0ccf9464597
https://doi.org/10.1109/led.2022.3195263
https://doi.org/10.1109/led.2022.3195263
Autor:
Ling Yang, Bin Hou, Fuchun Jia, Meng Zhang, Mei Wu, Xuerui Niu, Hao Lu, Chunzhou Shi, Minhan Mi, Qing Zhu, Yang Lu, Xiaohua Ma, Yue Hao
Publikováno v:
IEEE Transactions on Electron Devices. 69:4170-4174
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fd313373802ae2aaf1c466de3eb408b
https://doi.org/10.1109/ted.2022.3179675
https://doi.org/10.1109/ted.2022.3179675
Autor:
Xuerui Niu, Bin Hou, Ling Yang, Meng Zhang, Xinchuang Zhang, Hao Lu, Fuchun Jia, Jiale Du, Mei Wu, Fang Song, Chong Wang, Xiaohua Ma, Yue Hao
Publikováno v:
IEEE Transactions on Electron Devices. 69:57-62
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf532c9992f8849ba315a0ed59411915
https://doi.org/10.1109/ted.2021.3129712
https://doi.org/10.1109/ted.2021.3129712
Autor:
Xuerui Niu, Bin Hou, Meng Zhang, Ling Yang, Mei Wu, Xinchuang Zhang, Fuchun Jia, Chong Wang, Xiaohua Ma, Yue Hao
Publikováno v:
Chinese Physics B.
GaN-based p-channel heterostructure field-effect transistors (p-HFETs) face significant constraints on the on-state currents compared to the n-channel high electron mobility transistors (n-HEMTs). In this work, we propose a novel double-heterostructu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46a94157556739b90dd90af209a1f661
https://doi.org/10.1088/1674-1056/acc7f4
https://doi.org/10.1088/1674-1056/acc7f4
Autor:
Xuerui Niu, Lu Hao, Ling Yang, Zeyan Si, Xiaohua Ma, Xinchuang Zhang, Bin Hou, Mei Wu, Meng Zhang, Yue Hao
Publikováno v:
IEEE Transactions on Electron Devices. 68:4842-4846
In this article, we report on the high dc and RF performance of AlGaN/GaN high electron mobility transistors that employ Ti/Au/Al/Ni/Au metallization stack with shallow trench etching ohmic contact (STEOC). An excellent ohmic contact performance incl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4264599700cd0bac57e39659fff0f51f
https://doi.org/10.1109/ted.2021.3101462
https://doi.org/10.1109/ted.2021.3101462
Autor:
Meng Zhang, Xuerui Niu, Xiaohua Ma, Ting-Chang Chang, Fong-Min Ciou, Du Jiale, Bin Hou, Qing Zhu, Yilin Chen, Chong Wang, Yu-Shan Lin, Mei Wu, Kuan-Hsu Chen, Ling Yang, Yue Hao
Publikováno v:
IEEE Transactions on Electron Devices. 68:4283-4288
The gate and drain bias dependence of hot electron-induced degradation in GaN-based metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) was investigated in this work. Devices exhibit an abnormal increase in peak transcond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::092370a287c94565cf70bba6026f89fe
https://doi.org/10.1109/ted.2021.3096929
https://doi.org/10.1109/ted.2021.3096929
Autor:
Minhan Mi, Yue Hao, Bin Hou, Mei Wu, Qing Zhu, Kai Cheng, Xiaohua Ma, Ling Yang, Xuerui Niu, Lu Hao, Zeyan Si, Meng Zhang
Publikováno v:
IEEE Transactions on Electron Devices. 68:3308-3313
In this article, we report on the effective transconductance ( ${g}_{m}$ ) and gain linearity improvement of submicrometer gate AlN-barrier-based transistors using GaN/InGaN coupling-channel structures. The fabricated AlN/GaN/InGaN coupling-channel h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaf0088bcad3d284a20736daf65266b6
https://doi.org/10.1109/ted.2021.3082104
https://doi.org/10.1109/ted.2021.3082104
Autor:
Xuerui Niu, Xiaohua Ma, Meng Zhang, Ling Yang, Bin Hou, Mei Wu, Fuchun Jia, Xinchuang Zhang, Chong Wang, Yue Hao
Publikováno v:
physica status solidi (b). 260
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eebff900cf3edea5073688e965afb08d
https://doi.org/10.1002/pssb.202200278
https://doi.org/10.1002/pssb.202200278