Zobrazeno 1 - 10 of 40 pro vyhledávání: '"Xuejian, Xie"'
1
Akademický článek
Research progress of large size SiC single crystal materials and devices
Autor: Xiufang Chen, Xianglong Yang, Xuejian Xie, Yan Peng, Longfei Xiao, Chen Shao, Huadong Li, Xiaobo Hu, Xiangang Xu
Publikováno v: Light: Science & Applications, Vol 12, Iss 1, Pp 1-8 (2023)
The crystal growth, defects control, electrical property and corresponding device authentication of N-type, P-type and semi-insulating silicon carbide crystals in Shandong University are introduced.
Externí odkaz: https://doaj.org/article/b02002e0959a4c82b83e23fb06533262
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2
Akademický článek
Research Progress in Capping Diamond Growth on GaN HEMT: A Review
Autor: Yingnan Wang, Xiufei Hu, Lei Ge, Zonghao Liu, Mingsheng Xu, Yan Peng, Bin Li, Yiqiu Yang, Shuqiang Li, Xuejian Xie, Xiwei Wang, Xiangang Xu, Xiaobo Hu
Publikováno v: Crystals, Vol 13, Iss 3, p 500 (2023)
With the increased power density of gallium nitride (GaN) high electron mobility transistors (HEMTs), effective cooling is required to eliminate the self-heating effect. Incorporating diamond into GaN HEMT is an alternative way to dissipate the heat
Externí odkaz: https://doaj.org/article/3ec5fe4949e7419ca53e36702a664a1a
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3
Akademický článek
Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC
Autor: Li Sun, Peng Wang, Xuejian Xie, Xiufang Chen, Fapeng Yu, Yanlu Li, Xiangang Xu, Xian Zhao
Publikováno v: Nanomaterials, Vol 12, Iss 3, p 346 (2022)
Epitaxial graphene on SiC without substrate interaction is viewed as one of the most promising two-dimensional (2D) materials in the microelectronics field. In this study, quasi-free-standing bilayer epitaxial graphene (QFSBEG) on SiC was fabricated
Externí odkaz: https://doaj.org/article/3434cd52e72349b5a606b831eba9f963
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4
Growth of p-type 4H-SiC single crystals by physical vapor transport using p-type SiC powder
Autor: Guanglei Zhong, Xuejian Xie, Desheng Wang, Xinglong Wang, Li Sun, Xianglong Yang, Yan Peng, Xiufang Chen, Xiaobo Hu, Xiangang Xu
Publikováno v: CrystEngComm. 24:7861-7868
In this study, a novel Al doping method was used to grow p-type SiC. p-Type 4H-SiC crystals were grown by a physical vapor transport (PVT) method using p-type SiC powder.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::199d9fb78e59afc55e4898d61516f547
https://doi.org/10.1039/d2ce00612j
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8
Correlation between the response performance of epitaxial graphene/SiC UV-photodetectors and the number of carriers in graphene
Autor: Xiufang Chen, Xiaomeng Li, Xiangang Xu, Lei Ge, Xiaobo Hu, Rongkun Wang, Longfei Xiao, Xuejian Xie, Yan Peng, Zhiyuan Zuo
Publikováno v: Carbon. 183:590-599
Metal-Graphene-Metal (MGM) UV photodetectors have been fabricated by using an Epitaxial Graphene (EG)/SiC junction on a semi-insulating 4H–SiC. The migration of carriers in the EG/SiC photodetectors under 365 nm light irradiation is clarified by in
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::02e9008d758aaf36697f39a51ca83175
https://doi.org/10.1016/j.carbon.2021.07.052
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10
Akademický článek
Comparison of Measurements with Finite-Element Analysis of Silicon-Diaphragm-Based Fiber-Optic Fabry–Perot Temperature Sensors
Autor: Rongkun Wang, Xuejian Xie, Xiangang Xu, Xiufang Chen, Longfei Xiao
Publikováno v: Sensors, Vol 19, Iss 21, p 4780 (2019)
Silicon-diaphragm-based fiber-optic Fabry−Perot sensors with different intracavity pressures were fabricated by anodic bonding and microelectromechanical techniques. The thermal stress and thermal expansion of the Fabry−Perot (FP) sensor caused b
Externí odkaz: https://doaj.org/article/1c9c84e5e9ee4988b88273a80142f535
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