Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Xuefen Cai"'
Autor:
Qi Wang, Yan Sun, Aili Zhao, Xuefen Cai, Aili Yu, Qian Xu, Weili Liu, Nan Zhang, Siyi Wu, Yiqin Chen, Wenxiang Wang
Publikováno v:
Ecotoxicology and Environmental Safety, Vol 255, Iss , Pp 114810- (2023)
Increasing evidence has shown that gut microbes play an important role in the reproductive endocrine system and the development of polycystic ovary syndrome (PCOS). However, whether environmental factors are involved in these gut microbiota alteratio
Externí odkaz:
https://doaj.org/article/4f92f5bce3244e5e8c004e21c4324796
Autor:
Yuehong Li, Xuefen Cai, Binhua Dong, Qi Wang, Xiaohui Yang, Aili Yu, Huijuan Wei, Zhanghong Ke, Pengming Sun, Beihong Zheng, Yan Sun
Publikováno v:
Frontiers in Oncology, Vol 12 (2022)
BackgroundRelated studies have shown that it is safe for cancer patients to undergo assisted reproduction. However, studies on whether a history of cancer affects long-term reproductive outcomes in women who undergo assisted reproductive technology (
Externí odkaz:
https://doaj.org/article/3aff6c1213ed4a3095a3df66e72dc00a
Autor:
Yiqin Chen, Yan Sun, Aili Zhao, Xuefen Cai, Aili Yu, Qian Xu, Panlin Wang, Jing Yao, Qi Wang, Wenxiang Wang
Publikováno v:
Ecotoxicology and Environmental Safety, Vol 241, Iss , Pp 113816- (2022)
Arsenic contamination is a worldwide public health problem, and the effect of arsenic on male reproduction has been extensively studied; however, data on the biotoxicity of arsenic in terms of female reproduction are more scarce. In this study, a hum
Externí odkaz:
https://doaj.org/article/22776b7ada854348b3d12cdc168bbc02
Publikováno v:
Acta Pharmaceutica Sinica B, Vol 2, Iss 5, Pp 495-501 (2012)
Cervical erosion, a pathological change associated with chronic cervicitis, is a common condition that is difficult to cure. Many patients particularly those with mild or medium infection and those preparing for pregnancy require a simple but effecti
Externí odkaz:
https://doaj.org/article/f5ab37dc2ad54ff5bdf8ea5ace48fd73
Publikováno v:
Physical Review B. 106
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::772b385a27c3f2bb6d6e43e7be9154c4
https://doi.org/10.1103/physrevb.106.214102
https://doi.org/10.1103/physrevb.106.214102
Publikováno v:
Journal of Applied Physics. 133:125701
Tetragonal ZrO2 high-k material as the dielectric layer of dynamic random access memory (DRAM) capacitors faces bulk defect related leakage current, which is one of the main obstacles to the down-scaling of DRAM devices. Boron and hydrogen impurities
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41ff9aa594cf661443851575cfe75418
https://doi.org/10.1063/5.0137316
https://doi.org/10.1063/5.0137316
Autor:
Yu, Song, Guanghui, Zhang, Xuefen, Cai, Baoying, Dou, Zhihao, Wang, Yang, Liu, Hang, Zhou, Le, Zhong, Gang, Dai, Xu, Zuo, Su-Huai, Wei
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 18(14)
Irradiation damage is a key issue for the reliability of semiconductor devices under extreme environments. For decades, the ionizing-irradiation-induced damage in transistors with silica-silicon (SiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::e2477652b51294cfc23babe9a7aa52cd
https://pubmed.ncbi.nlm.nih.gov/35146908
https://pubmed.ncbi.nlm.nih.gov/35146908
Publikováno v:
Journal of Physics D: Applied Physics. 56:105101
Ge has the potential to replace Si as the future field-effect transistors channel material due to its superior hole mobility, and cubic zirconia with high dielectric constant and small lattice mismatch can be selected as its oxide layer. At present,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df080c02d06f2d837dff39fcbbefd731
https://doi.org/10.1088/1361-6463/acbaa8
https://doi.org/10.1088/1361-6463/acbaa8
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 17:2200316
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3560bc7d47ef468e7c823ed8a52e549
https://doi.org/10.1002/pssr.202200316
https://doi.org/10.1002/pssr.202200316
Publikováno v:
Physical Review Materials. 5
Carbon vacancy ${\mathrm{V}}_{\mathrm{C}}$ is the dominant detrimental defect in SiC, and hydrogen passivation of ${\mathrm{V}}_{\mathrm{C}}$ is often used to facilitate its application in electronic devices. However, the exact nature of hydrogen pas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21154372de1e1927c37f92f2d557025e
https://doi.org/10.1103/physrevmaterials.5.064604
https://doi.org/10.1103/physrevmaterials.5.064604