Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Xuecong Ji"'
Autor:
Long Chen, Ying Zhou, He Zhang, Xuecong Ji, Ke Liao, Yu Ji, Ying Li, Zhongnan Guo, Xi Shen, Richeng Yu, Xiaohui Yu, Hongming Weng, Gang Wang
Publikováno v:
Communications Materials, Vol 5, Iss 1, Pp 1-9 (2024)
Abstract Rare-earth engineering is an effective way to introduce and tune magnetism in topological kagome materials, which have been acting as a fertile platform to investigate the quantum interactions between geometry, topology, spin, and correlatio
Externí odkaz:
https://doaj.org/article/8b0962b41d564e7da8b6ca3c9017ebf8
Autor:
Shunye Gao, Shuai Zhang, Cuixiang Wang, Shaohua Yan, Xin Han, Xuecong Ji, Wei Tao, Jingtong Liu, Tiantian Wang, Shuaikang Yuan, Gexing Qu, Ziyan Chen, Yongzhao Zhang, Jierui Huang, Mojun Pan, Shiyu Peng, Yong Hu, Hang Li, Yaobo Huang, Hui Zhou, Sheng Meng, Liu Yang, Zhiwei Wang, Yugui Yao, Zhiguo Chen, Ming Shi, Hong Ding, Huaixin Yang, Kun Jiang, Yunliang Li, Hechang Lei, Youguo Shi, Hongming Weng, Tian Qian
Publikováno v:
Physical Review X, Vol 13, Iss 4, p 041049 (2023)
The Mott insulator provides an excellent foundation for exploring a wide range of strongly correlated physical phenomena, such as high-temperature superconductivity, quantum spin liquid, and colossal magnetoresistance. A Mott insulator with the simpl
Externí odkaz:
https://doaj.org/article/098de9905dbf4d459b3334518e751c85
Publikováno v:
Physical Review B. 106
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a7e34c0ae7497812b97fe307cbc09e0
https://doi.org/10.1103/physrevb.106.235103
https://doi.org/10.1103/physrevb.106.235103
Autor:
Huan, Xie, Tan, Zhang, Ruikuan, Xie, Zhufeng, Hou, Xuecong, Ji, Yongyu, Pang, Shaoqing, Chen, Maria-Magdalena, Titirici, Hongming, Weng, Guoliang, Chai
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 33(31)
Bismuth (Bi) is a topological crystalline insulator (TCI), which has gapless topological surface states (TSSs) protected by a specific crystalline symmetry that strongly depends on the facet. Bi is also a promising electrochemical CO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::34720341159b1ec2cee3b2b3221912bb
https://pubmed.ncbi.nlm.nih.gov/34174114
https://pubmed.ncbi.nlm.nih.gov/34174114
Autor:
Zhufeng Hou, Maria-Magdalena Titirici, Ruikuan Xie, Guoliang Chai, Tan Zhang, Xuecong Ji, Yongyu Pang, Huan Xie, Shaoqing Chen, Hongming Weng
Publikováno v:
Advanced Materials. 33:2008373
Bismuth (Bi) is a topological crystalline insulator (TCI), which has gapless topological surface states (TSSs) protected by a specific crystalline symmetry that strongly depends on the facet. Bi is also a promising electrochemical CO2 reduction react
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8fdbd37561b3a5d6c2a7998b2ebde54
https://doi.org/10.1002/adma.202008373
https://doi.org/10.1002/adma.202008373
Autor:
Xie, Huan, Zhang, Tan, Xie, Ruikuan, Hou, Zhufeng, Ji, Xuecong, Pang, Yongyu, Chen, Shaoqing, Titirici, Maria‐Magdalena, Weng, Hongming, Chai, Guoliang
Publikováno v:
Advanced Materials; 8/5/2021, Vol. 33 Issue 31, p1-10, 10p