Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Xue-Cheng Yao"'
Autor:
Yao-yao Lin, Lin Meng, Fan-jia Guo, Xin-han Zhang, Dan-dan Yang, Xue-cheng Yao, Ming-juan Jin, Jian-bing Wang, Meng-ling Tang, Kun Chen
Publikováno v:
Ecotoxicology and Environmental Safety, Vol 261, Iss , Pp 115114- (2023)
Background: Essential trace elements (ETEs) are essential nutrients for keeping the nervous system functioning. Associations between ETEs and cognitive function are still inconclusive and limited. Objectives: We aimed to investigate the individual an
Externí odkaz:
https://doaj.org/article/0bc59282eba44a2bbac616b9d03ed904
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 430-434 (2019)
Ultraviolet (UV) detection and electrical characteristics of In0.17Al0.83N/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with Al2O3 gate-dielectric and passivation formed by using ultrasonic spray pyrolysis de
Externí odkaz:
https://doaj.org/article/cd340f9eecde4efdad5773c86532f593
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1142-1146 (2018)
Novel Al2O3-dielectric InAlN/AlN/GaN Γ-Gate metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with composite Al2O3/TiO2 passivation oxides formed by using ultrasonic spray pyrolysis deposition/RF sputtering, respectively
Externí odkaz:
https://doaj.org/article/7ab9b3f25e0a471b8da70b7aef89ff5c
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1142-1146 (2018)
Novel Al2O3-dielectric InAlN/AlN/GaN Γ-Gate metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with composite Al2O3/TiO2 passivation oxides formed by using ultrasonic spray pyrolysis deposition/RF sputtering, respectively
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a86faf79e3389a87c27ad73595df5c3d
https://doi.org/10.1109/jeds.2018.2870844
https://doi.org/10.1109/jeds.2018.2870844