Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Xue Ren Zhang"'
Autor:
Yun-He Han, Xue-Ren Zhang, Bu-Xuan Wang, Haitong Yu, Ya-Bin Gao, Zhen-Hua Lv, Jun-Jie Zhao, Yuanyuan Duan, Xiao-Dong Wang
Publikováno v:
International Journal of Thermal Sciences. 70:54-64
An inverse model based on the shooting method, Mie theory and the improved Kramers–Kronig (KK) relation was combined with FTIR and Abbe refractometer measurements to calculate the complex refractive indices of various infrared opacifiers. The effec
Publikováno v:
Aircraft Engineering and Aerospace Technology. 73:26-30
A new reverse educing method (REM) is presented to estimate the vibrational stress on rotating aeroengine blades from the actual fracture section. This method does not conform to the traditional calculating method, but involves the reverse solution i
Publikováno v:
Materials Science Forum. :35-38
A new kind of self-locking nuts which can prevent the fastener from loosening is developed using shape memory alloy The transverse clamping force of SMA nuts on bolts caused by shape memory effect will always exist in the fastener, which can prevent
Autor:
Patrick Kung, Gail J. Brown, Xue Ren Zhang, D. Walker, K.S. Kim, William C. Mitchel, Manijeh Razeghi, Adam William Saxler
Publikováno v:
Materials Science Forum. :1229-1234
Autor:
Xue Ren Zhang, D. Walker, Adam William Saxler, M. Ahoujja, Manijeh Razeghi, William C. Mitchel, H. R. Vydyanath, Patrick Kung, J.S. Solomon
Publikováno v:
Materials Science Forum. :1161-1166
Autor:
Adam William Saxler, J.S. Solomon, Patrick Kung, Xue Ren Zhang, D. Walker, Manijeh Razeghi, William C. Mitchel
Publikováno v:
Materials Science Forum. :1081-1086
Publikováno v:
Key Engineering Materials. :433-442
Publikováno v:
Scopus-Elsevier
We report the growth and photoluminescence characterization of GaN grown on different substrates and under different growth conditions using metalorganic chemical vapor deposition. The deep-level yellow luminescence centered at around 2.2eV is attrib
Publikováno v:
Scopus-Elsevier
GaN ultraviolet photovoltaic and photoconductive detectors were grown on sapphire substrates by metalorganic chemical vapor deposition. The spectral response was analyzed considering the detector structure of a p-n junction connected back-to-back wit
Externí odkaz:
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http://www.scopus.com/inward/record.url?eid=2-s2.0-0029765310&partnerID=MN8TOARS