Zobrazeno 1 - 10
of 164
pro vyhledávání: '"Xue Feng Zheng"'
Publikováno v:
工程科学学报, Vol 44, Iss 11, Pp 1935-1945 (2022)
Traditional cloud computing is developed from a high-performance cluster. Every server in the high-performance cluster has its own resources, including a CPU, memory, a network, I/O (Input/Output), a power system, and a heat dissipation system. Using
Externí odkaz:
https://doaj.org/article/eda1251b4a994ccbaa94a3d31fdcf57d
Publikováno v:
工程科学学报, Vol 44, Iss 7, Pp 1244-1254 (2022)
The CPU is the core part of all integrated circuits. Although some homemade CPUs of proprietary intellectual property rights are rapidly developed, few high-performance chipsets are available, especially in server domains, to match them. Thus, the to
Externí odkaz:
https://doaj.org/article/b2d69f1c5543420c99d400941f52a9eb
Publikováno v:
工程科学学报, Vol 42, Iss 4, Pp 490-499 (2020)
With the development of cloud computing technology, more individuals and organizations have chosen cloud services to store and maintain their data and reduce the burden on local storage and corresponding maintenance costs. However, although the cloud
Externí odkaz:
https://doaj.org/article/5aa5df020fcd43f89381bfbadc0de890
Autor:
Yao-Feng Zhu, Wei-Ping Wang, Xue-Feng Zheng, Zhi Chen, Tao Chen, Zi-Yun Huang, Lin-Ju Jia, Wan-Long Lei
Publikováno v:
Neural Regeneration Research, Vol 15, Iss 4, Pp 724-730 (2020)
Astrocytes and astrocyte-related proteins play important roles in maintaining normal brain function, and also regulate pathological processes in brain diseases and injury. However, the role of astrocytes in the dopamine-depleted striatum remains uncl
Externí odkaz:
https://doaj.org/article/216a67946c72464ea09f838495102f16
Autor:
Fan Tong, Chun-jin Xiong, Chun-hua Wei, Ye Wang, Zhi-wen Liang, Hui Lu, Hui-jiao Pan, Ji-hua Dong, Xue-feng Zheng, Gang Wu, Xiao-rong Dong
Publikováno v:
Therapeutic Advances in Medical Oncology, Vol 12 (2020)
Externí odkaz:
https://doaj.org/article/c7b5991fec98474aa412d06a10eb280d
Autor:
Xue-Feng Zheng, Guan-Jun Chen, Xiao-Hu Wang, Ying-Zhe Wang, Chong Wang, Wei Mao, Yang Lu, Bin Hou, Min-Han Mi, Ling Lv, Yan-Rong Cao, Qing Zhu, Gang Guo, Pei-Jun Ma, Xiao-Hua Ma, Yue Hao
Publikováno v:
AIP Advances, Vol 10, Iss 6, Pp 065111-065111-5 (2020)
The effect of 3 MeV proton irradiation on interface traps under a Schottky contact in an AlGaN/GaN heterostructure has been investigated in this work. Utilizing the frequency-dependent conductance technique, the detailed information about interface t
Externí odkaz:
https://doaj.org/article/ed243482bb06497e8689afeb8cbfcdb2
Autor:
Tian Zhu, Xue-Feng Zheng, Tai-Xu Yin, Hao Zhang, Xiao-Hu Wang, Shao-Zhong Yue, Tan Wang, Tao Han, Xiao-Hua Ma, Yue Hao
Publikováno v:
Applied Physics Letters. 122
In this work, the effects of proton-induced trap evolution on the electrical performances of AlGaN/GaN metal–insulator–semiconductor (MIS) high-electron-mobility-transistors (HEMTs) have been investigated in detail. Contrary to observed proton-in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6684bb811b715bd8a485f9ebcc45354
https://doi.org/10.1063/5.0146638
https://doi.org/10.1063/5.0146638
Autor:
Yun-Long He, Bai-Song Sheng, Yue-Hua Hong, Peng Liu, Xiao-Li Lu, Fang Zhang, Xi-Chen Wang, Yuan Li, Xue-Feng Zheng, Xiao-Hua Ma, Yue Hao
Publikováno v:
Applied Physics Letters. 122
This Letter reports two kinds of oxygen-containing plasma treated β-Ga2O3 Schottky barrier diodes (SBDs), including N2O plasma treatment and O2 plasma treatment, and the SBD without plasma is prepared for comparison. I–V characteristics, breakdown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a62aabb1f4888a6ae0cf7f27d1d8d46
https://doi.org/10.1063/5.0145659
https://doi.org/10.1063/5.0145659
Autor:
Yan-Rong Cao, Maosen Wang, K. K. Chen, Peijun Ma, Tian Zhu, Wang Xiaohu, Xiaohua Ma, Yue Hao, Jia Wang, Hao Zhang, Du Ming, Xue-Feng Zheng, Ling Lv
Publikováno v:
IEEE Transactions on Nuclear Science. 68:2616-2623
The combined effects of proton irradiation and forward gate-bias stress on the interface traps of AlGaN/GaN heterostructure have been studied in this article. It is found that the effect of proton irradiation and forward gate-bias on the shift of fla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4526c2f98c1373ee88a307a1355d617
https://doi.org/10.1109/tns.2021.3112767
https://doi.org/10.1109/tns.2021.3112767
Autor:
Chunfu Zhang, Chong Wang, Xue-Feng Zheng, Jincheng Zhang, Haiyong Wang, Jiabo Chen, Du Ming, Cui Yang, Jingtao Luo, Shenglei Zhao, Wei Mao, Yue Hao
Publikováno v:
IEEE Electron Device Letters. 42:1264-1267
A monolithic bidirectional switch based on anti-paralleled two reverse blocking p-GaN HEMTs has been proposed and demonstrated in this work. The recessed Schottky drain technique is utilized to effectively reduce the on-state voltage and thus lowerin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28b359dcc9a1401286af41b85224ea20
https://doi.org/10.1109/led.2021.3098040
https://doi.org/10.1109/led.2021.3098040