Zobrazeno 1 - 10
of 329
pro vyhledávání: '"Xubing Lu"'
Autor:
Zhidong Pan, Jielian Zhang, Xueting Liu, Lei Zhao, Jingyi Ma, Chunlai Luo, Yiming Sun, Zhiying Dan, Wei Gao, Xubing Lu, Jingbo Li, Nengjie Huo
Publikováno v:
Advanced Science, Vol 11, Iss 33, Pp n/a-n/a (2024)
Abstract Resistive switching memories have garnered significant attention due to their high‐density integration and rapid in‐memory computing beyond von Neumann's architecture. However, significant challenges are posed in practical applications w
Externí odkaz:
https://doaj.org/article/41068b425aad4f42a733363032bd0c2c
Autor:
Zhiwei Chen, Wenjie Li, Zhen Fan, Shuai Dong, Yihong Chen, Minghui Qin, Min Zeng, Xubing Lu, Guofu Zhou, Xingsen Gao, Jun-Ming Liu
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-12 (2023)
Abstract Reservoir computing (RC) offers efficient temporal information processing with low training cost. All-ferroelectric implementation of RC is appealing because it can fully exploit the merits of ferroelectric memristors (e.g., good controllabi
Externí odkaz:
https://doaj.org/article/f5fbc3522c444e9b9aa38688c6805090
Autor:
Haoyue Deng, Zhen Fan, Shuai Dong, Zhiwei Chen, Wenjie Li, Yihong Chen, Kun Liu, Ruiqiang Tao, Guo Tian, Deyang Chen, Minghui Qin, Min Zeng, Xubing Lu, Guofu Zhou, Xingsen Gao, Jun-Ming Liu
Publikováno v:
APL Machine Learning, Vol 1, Iss 4, Pp 046110-046110-12 (2023)
Memristive neural networks have extensively been investigated for their capability in handling various artificial intelligence tasks. The training performance of memristive neural networks depends on the pulse scheme applied to the constituent memris
Externí odkaz:
https://doaj.org/article/fe6298b6c2514f1ba000a639676bec1a
Autor:
Dongdong Xu, Zhiming Gong, Yue Jiang, Yancong Feng, Zhen Wang, Xingsen Gao, Xubing Lu, Guofu Zhou, Jun-Ming Liu, Jinwei Gao
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
The poor contact at poly(3-hexylthiophene)/perovskite interface has led to unsatisfactory performance in solar cells. To resolve this issue, the authors introduce a molecular bridge to form a charge transport channel, realizing devices with maximum e
Externí odkaz:
https://doaj.org/article/aac7ec1d417c4c5ab5d8b52ae571924b
Autor:
Kaihui Chen, Zhen Fan, Jingjing Rao, Wenjie Li, Deming Wang, Changjian Li, Gaokuo Zhong, Ruiqiang Tao, Guo Tian, Minghui Qin, Min Zeng, Xubing Lu, Guofu Zhou, Xingsen Gao, Jun-Ming Liu
Publikováno v:
Journal of Materiomics, Vol 8, Iss 5, Pp 967-975 (2022)
Spiking neural network (SNN) consisting of memristor-based artificial neurons and synapses has emerged as a compact and energy-efficient hardware solution for spatiotemporal information processing. However, it is challenging to develop memristive neu
Externí odkaz:
https://doaj.org/article/21f6809d898040f4b1edc5b67693f67d
Autor:
Min Guo, Hai Ou, Dongyu Xie, Qiaoji Zhu, Mengye Wang, Lingyan Liang, Fengjuan Liu, Ce Ning, Hongtao Cao, Guangcai Yuan, Xubing Lu, Chuan Liu
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 3, Pp n/a-n/a (2023)
Abstract High‐performance bilayer In2O3/IGZO thin‐film transistors (TFTs) fabricated by pulsed laser deposition are reported. The TFTs exhibit an on/off current ratio of 109, a reversed subthreshold slope (ss) of 0.08 V dec−1, and a high satura
Externí odkaz:
https://doaj.org/article/cc5dc9a2a70046a4bc9083b39931ca09
Autor:
Yongjian Luo, Zhenxun Tang, Xiaozhe Yin, Chao Chen, Zhen Fan, Minghui Qin, Min Zeng, Guofu Zhou, Xingsen Gao, Xubing Lu, Jiyan Dai, Deyang Chen, Jun-Ming Liu
Publikováno v:
Journal of Materiomics, Vol 8, Iss 2, Pp 311-318 (2022)
As a high-k material, hafnium oxide (HfO2) has been used in gate dielectrics for decades. Since the discovery of polar phase in Si-doped HfO2 films, chemical doping has been widely demonstrated as an effective approach to stabilize the ferroelectric
Externí odkaz:
https://doaj.org/article/20fdcf2e2053480a901048ea7a06cd56
Autor:
Boyuan Cui, Zhen Fan, Wenjie Li, Yihong Chen, Shuai Dong, Zhengwei Tan, Shengliang Cheng, Bobo Tian, Ruiqiang Tao, Guo Tian, Deyang Chen, Zhipeng Hou, Minghui Qin, Min Zeng, Xubing Lu, Guofu Zhou, Xingsen Gao, Jun-Ming Liu
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-12 (2022)
Robust, fast, and low-power hardware platforms are desirable for the implementation of real-time machine vision. Here the authors develop a computing-in-sensor network using ferroelectric photo sensors with remanent-polarization-controlled photo resp
Externí odkaz:
https://doaj.org/article/af329b3f37d7418aa2647bb90c9f5821
Autor:
Jingjing Rao, Zhen Fan, Qicheng Huang, Yongjian Luo, Xingmin Zhang, Haizhong Guo, Xiaobing Yan, Guo Tian, Deyang Chen, Zhipeng Hou, Minghui Qin, Min Zeng, Xubing Lu, Guofu Zhou, Xingsen Gao, Jun-Ming Liu
Publikováno v:
Journal of Advanced Dielectrics, Vol 12, Iss 03 (2022)
Ferroelectric tunnel junction (FTJ) has attracted considerable attention for its potential applications in nonvolatile memory and neuromorphic computing. However, the experimental exploration of FTJs with high ON/OFF ratios is a challenging task due
Externí odkaz:
https://doaj.org/article/edeca8b9d2eb42f8b2f97716d2f25fe6
Autor:
Yihong Chen, Zhen Fan, Shuai Dong, Minghui Qin, Min Zeng, Xubing Lu, Gougu Zhou, Xingsen Gao, Jun-Ming Liu
Publikováno v:
Advanced Intelligent Systems, Vol 4, Iss 5, Pp n/a-n/a (2022)
Memristor crossbar is extensively investigated as an energy‐efficient accelerator for neural network (NN) computations. However, hardware implementation of NNs using realistic memristors is challenging due to the ubiquity of faults (mainly classifi
Externí odkaz:
https://doaj.org/article/db90a6ad64ee4fc8b17ba3a75d3af73f