Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Xubao Wang"'
Publikováno v:
Applied Physics B. 124
An off-axis ellipsoid focus system is designed to focus rectangular beams that are emitted by a direct high-power laser diode (LD) stack for material processing. This off-axis ellipsoid focus method can be applied to LD stacks with different spot siz
Publikováno v:
Semiconductor Lasers and Laser Dynamics VIII.
An optical system is designed to shape the rectangular beam which emitted by direct high power laser diode stack for laser material processing. Beam parameter product theory and inverted Kepler telescope system principle are applied to analyze and de
Publikováno v:
Frontiers of Optoelectronics in China. 4:393-397
With the development of laser technology, laser application technology increasingly plays a leading role in the field of industry. High power laser products and their safety requirements are attracting more attention. In laser industrial applications
Autor:
Xubao Wang, Tiechuan Zuo
Publikováno v:
Frontiers of Optoelectronics in China. 3:190-193
The research presented in this paper focuses on the laser-powder interaction. Through the experiment with metal powder in micrometers, we found that, in an invariable laser power density, the thickness of the final fabricated thin wall was similar to
Publikováno v:
Infrared and Laser Engineering. 47:1218003
Autor:
Peng Wu, Haijuan Yu, Xuechun Lin, Ling Zhang, Gang Li, Pengfei Zhao, Zou Shuzhen, Xiandan Yuan, Yaoyao Qi, Chaojian He, Xubao Wang, Zhang Zhiyan, Ying-Ying Yang
Publikováno v:
Journal of Semiconductors. 38:074004
We demonstrate a high-power blue diode laser operated at 447 nm combining laser diodes using an optical fiber bundle. As many as 127 diode lasers at 447 nm were coupled into 400 μ m/0.22NA fibers using an aspherical lens group with different focus l
Autor:
Heqing Wang, David Bajek, Maria Ana Cataluna, Bifeng Cui, Stephanie E. Haggett, A. Y. Ding, Liang Kong, Xubao Wang, Adam F. Forrest, J. Q. Pan
Publikováno v:
2014 International Semiconductor Laser Conference.
A novel passively mode-locked semiconductor edge-emitting laser is reported, based on an AlGaAs multi-quantum-well structure. Ultra short pulses are generated at 752 nm, with a 19.4-GHz repetition rate and a pulse duration of 3.5 ps.
Autor:
Ying Ding, Heqing Wang, Jiaoqing Pan, Bifeng Cui, Maria Ana Cataluna, Liang Kong, David Bajek, Xubao Wang, Stephanie E. Haggett
Publikováno v:
CLEO: 2013.
We report a novel semiconductor passively mode-locked edge-emitting laser based on a multi-quantum-well structure, emitting at 766 nm and enabling the generation of a stable 19.4-GHz pulse train with a pulse duration of ∼5 ps.
Publikováno v:
International Congress on Applications of Lasers & Electro-Optics.
An aspherical reflecting focusing mirror is designed and applied to reflect and finally focus the laser beam of a laser diodes stack into a spot, whose original beam size in fast axis direction is 22mm with a divergence angle of 0.5 degree, and in sl
Autor:
Hong Chen, Xubao Wang
Publikováno v:
International Laser Safety Conference.
Along with laser technology, particularly laser application technology gradually plays a leading role in the field of industrial field, high power laser products and their safety requirements attracted more and more attention. In fact, in laser weldi