Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Xuanwu Kang"'
Publikováno v:
Micromachines, Vol 13, Iss 5, p 748 (2022)
In this study, a dedicated dynamic measurement system was used to investigate the transient capacitance and recovery process of AlGaN/GaN lateral Schottky barrier diodes (SBDs). With the consideration of acceptor traps in the C-doped buffer, the C-V
Externí odkaz:
https://doaj.org/article/3ac7b99930f444ffbe7251694f79f837
Publikováno v:
Micromachines, Vol 12, Iss 11, p 1296 (2021)
This work investigates the transient characteristics of an AlGaN/GaN lateral Schottky barrier diode (SBD) and its recovery process with a dedicated dynamic measurement system. Both static and dynamic characteristics were measured, analyzed with the c
Externí odkaz:
https://doaj.org/article/0a7d44ee08d044a8bbe25bae27e14489
Publikováno v:
Nanomaterials, Vol 10, Iss 4, p 657 (2020)
The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio
Externí odkaz:
https://doaj.org/article/a15e7c507cdb4838894bd3db7a0f4c4d
Publikováno v:
IEEE Microwave and Wireless Technology Letters. 33:208-211
Publikováno v:
IEEE Transactions on Electron Devices. 70:402-408
Autor:
Xinyu Liu, Xuanwu Kang, Lan Bi, Haibo Yin, Ke Wei, Yingkui Zheng, Sen Huang, Xinhua Wang, Jie Fan
Publikováno v:
IEEE Transactions on Electron Devices. 68:1778-1783
Integration of an enhancement-mode (E-mode) metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT) with a high-performance lateral Schottky barrier controlled Schottky (LSBS) rectifier in a compact layout is fabricated on an u
Publikováno v:
IEEE Transactions on Electron Devices, 68(3)
In this brief, a high-performance quasi-vertical GaN Schottky barrier diode (SBD) on sapphire substrate with post-mesa nitridation process is reported, featuring a low damaged sidewall with extremely low leakage current. The fabricated SBD with a dri
Autor:
Qian Feng, Xusheng Tian, Hao Feng, Hong Zhou, Yachao Zhang, Jincheng Zhang, Zhuangzhuang Hu, Yuanjie Lv, Jing Ning, Yue Hao, Zhaoqing Feng, Yanni Zhang, Chunyong Zhao, Jianguo Li, Chunfu Zhang, Xuanwu Kang
Publikováno v:
IEEE Transactions on Electron Devices. 67:5628-5632
This work provides insight into the design principles and the reasonable construction of Ga2O3 heterojunction diode. We chose TiO2 grown by atomic layer deposition (ALD) as a suitable insulator with a small conduction band offset of TiO $_{2} \boldsy
Autor:
Yue Hao, Zhaoqing Feng, Hong Zhou, Jing Ning, Xuanwu Kang, Chunfu Zhang, Xusheng Tian, Qian Feng, Yanni Zhang, Yachao Zhang, Jincheng Zhang, Zhuangzhuang Hu, Zhe Li
Publikováno v:
IEEE Electron Device Letters. 41:333-336
In this work, we have demonstrated normally-off $\beta {-}\text {Ga}_{{2}}\text {O}_{{3}}$ metal-oxide-semiconductor field-effect transistor (MOSFET) with the ferroelectric charge storage gate stack structure. Saturation currents of 18.3 and 16.0 mA/
Autor:
Hong Zhou, Jincheng Zhang, Yachao Zhang, Kui Dang, Xuanwu Kang, Chunyong Zhao, Zhuangzhuang Hu, Yuanjie Lv, Jing Ning, Yue Hao, Zhaoqing Feng, Qian Feng, Xusheng Tian
Publikováno v:
IEEE Electron Device Letters. 41:441-444
In this letter, we report on demonstrating a high performance vertical $\beta $ -Ga2O3 Schottky barrier diode (SBD) based on a self-aligned beveled fluorine plasma treatment (BFPT) edge termination structure. Owing to the strong electronegativity of