Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Xuanlin Xiong"'
Autor:
Fei Hou, Huang Meichen, Lingli Hou, Jizhi Liu, Zhiwei Liu, Feibo Du, Juin J. Liou, Kepeng Zou, Wenqiang Song, Guijun Jiang, Xuanlin Xiong
Publikováno v:
IEEE Transactions on Electron Devices. 68:6338-6343
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a055f5aa1cb93b1ddd30fb0a2aafa3b
https://doi.org/10.1109/ted.2021.3122390
https://doi.org/10.1109/ted.2021.3122390
Autor:
Yang Liu, Wenqiang Song, Fei Hou, Qingsa Li, Feibo Du, Jizhi Liu, Xuanlin Xiong, Juin J. Liou, Zhiwei Liu
Publikováno v:
IEEE Transactions on Electron Devices. 67:1353-1356
In this brief, two novel diode-triggered silicon-controlled rectifiers (DTSCRs) with fast turn-on speed have been presented. By embedding current gain amplifier modules (i.e., Sziklai pair and Darlington pair) into the conventional DTSCR, the current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a1125b611a395459e0812964371d520
https://doi.org/10.1109/ted.2020.2965092
https://doi.org/10.1109/ted.2020.2965092
Publikováno v:
2021 IEEE 4th International Conference on Electronics Technology (ICET).
In this paper, a Hetero-junction Vertical Trench MOSFET (HVTFET) is proposed. The HVTFET has a multilayer structure. Compared with FinFETs and GAAs, the HVTFET provides a new method to effectively overcome the DIBL effect of the small-size IC. The ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94a5060d7d2bd382d874ad3b12e52dc0
https://doi.org/10.1109/icet51757.2021.9451090
https://doi.org/10.1109/icet51757.2021.9451090