Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Xuancong Fan"'
Publikováno v:
APL Photonics, Vol 7, Iss 7, Pp 076103-076103-7 (2022)
A grating coupler with a high coupling efficiency and low back reflections is designed and demonstrated on the thin film lithium niobate platform, which facilitates an efficient interface between a lithium niobate ridge waveguide and a standard singl
Externí odkaz:
https://doaj.org/article/fc90270368974d0caac9d1685fa007cd
Autor:
Ziliang Ruan, Kaixuan Chen, Zong Wang, Xuancong Fan, Ranfeng Gan, Lu Qi, Yiwei Xie, Changjian Guo, Zhonghua Yang, Naidi Cui, Liu Liu
Publikováno v:
Laser & Photonics Reviews. 17
Autor:
Gengxin Chen, Kaixuan Chen, Junwei Zhang, Ranfeng Gan, Lu Qi, Xuancong Fan, Ziliang Ruan, Zhenrui Lin, Jie Liu, Chao Lu, Alan Pak Tao Lau, Daoxin Dai, Changjian Guo, Liu Liu
Publikováno v:
Optics express. 30(14)
Electro-optic (EO) modulators with a high modulation bandwidth are indispensable parts of an optical interconnect system. A key requirement for an energy-efficient EO modulator is the low drive voltage, which can be provided using a standard compleme
Autor:
Kaixuan Chen, Gengxin Chen, Ziliang Ruan, Xuancong Fan, Junwei Zhang, Ranfeng Gan, Jie Liu, Daoxin Dai, Changjian Guo, Liu Liu
Publikováno v:
Journal of Semiconductors. 43:112301
Multi-lane integrated transmitter chips are key components in future compact optical modules to realize high-speed optical interconnects. Thin-film lithium niobate (TFLN) photonics have emerged as a promising platform for achieving high-performance c
Autor:
Sun Jie, Xin Wang, Zhang Zhuding, Tianyi Liu, Yang Xian, Huiqing Sun, Xiu Zhang, Xuancong Fan, Zhiyou Guo, Yi Xinyan
Publikováno v:
Superlattices and Microstructures. 107:49-55
Ultraviolet light-emitting diodes (UVLEDs) with staggered barriers have been studied. The energy band diagrams, internal quantum efficiency, total output power and radiative recombination rate are investigated by APSYS software. The simulation result
Publikováno v:
Superlattices and Microstructures. 104:19-23
Al x Ga 1-x N/Al 0.6 Ga 0.4 N graded superlattice hole blocking layers (GSL-HBLs) and Al x Ga 1-x N/Al 0.6 Ga 0.4 N graded superlattice electron blocking layers (GSL-EBLs) are applied to the traditional AlGaN-based ultraviolet light-emitting diodes (
Publikováno v:
Superlattices and Microstructures. 101:293-298
The application of a p-type superlattice hole reservoir layer in the traditional ultraviolet light-emitting diodes (UVLED) can obtain better Internal quantum efficiency (IQE) and output power, ease the problem about efficient carrier movement in high
Autor:
Yang Xian, Zhiyou Guo, Zhang Zhuding, Cheng Zhang, Yi Xinyan, Huiqing Sun, Sun Jie, Xuancong Fan
Publikováno v:
Superlattices and Microstructures. 97:371-377
Ultra violet light-emitting diodes (UVLEDs) with different types of Mg-doped barriers have been studied. The energy band diagrams, internal quantum efficiency, total output power and radiative recombination rate are investigated by APSYS software. Th
Publikováno v:
Journal of Display Technology. 12:573-576
Optical performances of blue InGaN light-emitting diodes (LEDs) with an undoped AlGaN electron-blocking layer (U-AlGaN EBL) embedded in the active region are investigated numerically. As a benefit of this special structural design, the electrons woul
Publikováno v:
Superlattices and Microstructures. 88:467-473
This paper principally presents the numerical investigation of electron blocking layers (EBL) structures with different Al concentration gradient changing in AlGaN-based deep ultraviolet light emitting diodes (DUV-LEDs). Compared to conventional EBL