Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Xuan-Luc Le"'
Autor:
Xuan-Luc Le, Xuan-Bach Le, Yuhwan Hwangbo, Jiho Joo, Gwang-Mun Choi, Yong-Sung Eom, Kwang-Seong Choi, Sung-Hoon Choa
Publikováno v:
Micromachines, Vol 14, Iss 3, p 601 (2023)
The aim of this study was to develop a flexible package technology using laser-assisted bonding (LAB) technology and an anisotropic solder paste (ASP) material ultimately to reduce the bonding temperature and enhance the flexibility and reliability o
Externí odkaz:
https://doaj.org/article/3da9defe5bf1426b86b7b283d646fdb9
Publikováno v:
AIMS Materials Science, Vol 11, Iss 4, Pp 802-814 (2024)
Sulfur is a promising anion dopant for exploring exotic physical phenomena in complex perovskite oxides. However, sulfurization to the epitaxial single-crystal oxide thin films with high crystallinity is experimentally challenging due to the volatili
Externí odkaz:
https://doaj.org/article/e4f39791fa4f4f4996e58a4384f7f08e
Autor:
Xuan Luc Le, Sung-Hoon Choa
Publikováno v:
Crystals, Vol 11, Iss 5, p 485 (2021)
As fine-pitch 3D wafer-level packaging becomes more popular in semiconductor industries, wafer-level prebond testing of various interconnect structures has become increasingly challenging. Additionally, improving the current-carrying capacity (CCC) a
Externí odkaz:
https://doaj.org/article/90bb68cabfc1494eb50b3dc3f5e9243b
Publikováno v:
International Journal of Precision Engineering and Manufacturing. 23:347-359
Publikováno v:
Journal of nanoscience and nanotechnology. 21(5)
Recently, fine pitch wafer level packaging (WLP) technologies have drawn a great attention in the semiconductor industries. WLP technology uses various interconnection structures including microbumps and through-silicon-vias (TSVs). To increase yield
Autor:
Sung-Hoon Choa, Xuan Luc Le
Publikováno v:
Crystals
Volume 11
Issue 5
Crystals, Vol 11, Iss 485, p 485 (2021)
Volume 11
Issue 5
Crystals, Vol 11, Iss 485, p 485 (2021)
As fine-pitch 3D wafer-level packaging becomes more popular in semiconductor industries, wafer-level prebond testing of various interconnect structures has become increasingly challenging. Additionally, improving the current-carrying capacity (CCC) a