Zobrazeno 1 - 10
of 281
pro vyhledávání: '"Xu-Dong Chen"'
Publikováno v:
Acta Crystallographica Section E: Crystallographic Communications, Vol 80, Iss 6, Pp 691-694 (2024)
The title compound, tetraethylammonium triazidotri-μ3-sulfido-[μ3-(trimethylsilyl)azanediido][tris(3,5-dimethylpyrazol-1-yl)hydroborato]triiron(+2.33)molybdenum(IV), (C8H20N)[Fe3MoS3(C15H22BN6)(C3H9NSi)(N3)3] or (Et4N)[(Tp*)MoFe3S3(μ3-NSiMe3)(N3)3
Externí odkaz:
https://doaj.org/article/f936fbde087c414ab19b336d6570dc84
Publikováno v:
Friction, Vol 12, Iss 6, Pp 1250-1271 (2024)
Abstract H62 brass material is one of the important materials in the process of electrical energy transmission and signal transmission, and has excellent performance in all aspects. Since the wear behavior of electrical contact pairs is particularly
Externí odkaz:
https://doaj.org/article/5f7bde4b89e64dd5947a656825b4c576
Publikováno v:
Science and Technology of Advanced Materials, Vol 24, Iss 1 (2023)
ABSTRACTGraphdiyne (GDY) is an emerging two-dimensional carbon allotrope featuring a direct bandgap and fascinating physical and chemical properties, and it has demonstrated its promising potential in applications of catalysis, energy conversion and
Externí odkaz:
https://doaj.org/article/4e64386944574bff900f053bd385bdf4
Autor:
Yuan Li, Zhi Cheng Zhang, Jiaqiang Li, Xu-Dong Chen, Ya Kong, Fu-Dong Wang, Guo-Xin Zhang, Tong-Bu Lu, Jin Zhang
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022)
Realizing fast nonvolatile floating gate memories is constrained by the slow tunnelling mechanism for charge injection. Here, Chen et al. demonstrate operation speed of 20 ns and power consumption of 10 fJ using graphdiyne oxide as a threshold switch
Externí odkaz:
https://doaj.org/article/bab562941f6949abaf6ae4bb3d9ffcbf
Autor:
Fu‐Dong Wang, Mei‐Xi Yu, Xu‐Dong Chen, Jiaqiang Li, Zhi‐Cheng Zhang, Yuan Li, Guo‐Xin Zhang, Ke Shi, Lei Shi, Min Zhang, Tong‐Bu Lu, Jin Zhang
Publikováno v:
SmartMat, Vol 4, Iss 1, Pp n/a-n/a (2023)
Abstract Artificial synapses and neurons are crucial milestones for neuromorphic computing hardware, and memristors with resistive and threshold switching characteristics are regarded as the most promising candidates for the construction of hardware
Externí odkaz:
https://doaj.org/article/5a5d102dd7884d83890d386bdf1c9606
Publikováno v:
IEEE Photonics Journal, Vol 12, Iss 2, Pp 1-14 (2020)
In this paper, a novel 3D vector decomposition is proposed for color-image encryption, in which a 3D vector is decomposed into two 3D vectors with random size in a random plane for providing a reliable security constraint. The technique of 3D vector
Externí odkaz:
https://doaj.org/article/9f264abfb16b40ddbaf3763603d4f6b8
Publikováno v:
Asian Journal of Surgery, Vol 43, Iss 1, Pp 29-35 (2020)
Summary: To review the efficacy and complications of 125I seeds combined with percutaneous vertebroplasty for the treatment of metastatic spinal tumors. We searched PubMed/MEDLINE from its inception to November 2018 for articles on metastatic spinal
Externí odkaz:
https://doaj.org/article/1aa1ca014fc4440eb45d41d1efb18c00
Publikováno v:
Energy Exploration & Exploitation, Vol 38 (2020)
Lithium battery is a new energy equipment. Because of its long service life and high energy density, it is widely used in various industries. However, as the number of uses increases, the life of the energy battery gradually decreases. Aging of batte
Externí odkaz:
https://doaj.org/article/23a90323d2a24827ad171a1446a94f9f
Publikováno v:
Energy Exploration & Exploitation, Vol 38 (2020)
Through the accurate prediction of power load, the start and stop of generating units in the power grid can be arranged economically and reasonably. The safety and stability of power grid operation can be maintained. First, chicken swarm optimizer ba
Externí odkaz:
https://doaj.org/article/7c072aac5953433a844f3942298441ec
Autor:
Da-Peng Xu, Lin-Jie Yu, Xu-Dong Chen, Lin Chen, Qing-Qing Sun, Hao Zhu, Hong-Liang Lu, Peng Zhou, Shi-Jin Ding, David Wei Zhang
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-6 (2017)
Abstract The density of oxygen vacancies characterization in high-k/metal gate is significant for semiconductor device fabrication. In this work, a new approach was demonstrated to detect the density of oxygen vacancies by in situ x-ray photoelectron
Externí odkaz:
https://doaj.org/article/d1747d23e6764f1080df0b768a0d2ea0