Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Xu Zhong-Ying"'
Autor:
Yin, Lei, Lu, Bin, Han, Lei, Wu, Run-ze, Johnson, Laura, Xu, Zhong-ying, Jiang, Shi-liang, Dai, Ru-ping
Publikováno v:
In European Journal of Radiology 2011 79(3):480-485
Autor:
Zhao, Shi-Hua, Yan, Chao-Wu, Zhu, Xian-Yang, Li, Jian-Jun, Xu, Nai-Xun, Jiang, Shi-Linag, Xu, Zhong-Ying, Wang, Cheng, Wu, Wen-Hui, Hai-Bo, Hu, Li, Shi-Guo, Ye, Zan-Kai, Wang, Hao
Publikováno v:
In International Journal of Cardiology 2008 129(1):81-85
Akademický článek
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Akademický článek
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Publikováno v:
Chinese Physics Letters. 23:2566-2569
The nonradiative recombination effect on carrier dynamics in GaInNAs/GaAs quantum wells is studied by time-resolved photoluminescence (TRPL) and polarization-dependent TRPL at various excitation intensities. It is found that both recombination dynami
Autor:
Sun Zheng, Huang Jin-Song, XU Zhong-Ying, GE Wei-Kun, Yang Xu-Dong, Sun Bao-Quan, Luo Xiang-dong
Publikováno v:
Chinese Physics Letters. 21:2529-2532
We employ photoluminescence (PL) and time-resolved PL to study exciton localization effect in InGaN epilayers. By measuring the exciton decay time as a, function of the monitored emission energy at different temperatures, we have found unusual behavi
Autor:
Luo Chang-ping, Zheng Bao-Zhen, Yuan Zhi-liang, Xu Zhong-Ying, Yang Xiao-Ping, Xu Ji-Zong, Zhang Peng-hua
Publikováno v:
Acta Physica Sinica (Overseas Edition). 4:523-530
Photoluminescence (PL) is used to study the interface properties of GaAs/AlGaAs quantum well (QW) heterostructures prepared by molecular beam epitaxy with growth interruption (GI). The discrete luminescence lines observed for the sample with GI are a
Publikováno v:
Chinese Physics Letters. 20:1148-1150
We study the two samples of AIInGaN, i.e., 1-mum GaN grown at 1030degreesC on the buffer and followed by a 0.6-mum-thick epilayer of AIInGaN under the low pressure of 76 Torr and the AIInGaN layer deposited directly on the buffer layer without the hi
Publikováno v:
Acta Physica Sinica (Overseas Edition). 3:384-389
The dependence of the excitonic lifetime on the well width has been studied in conventional GaAs/AlGaAs quantum wells. Two clearly different variations of the measured excitonic lifetime have been observed. For wide well widths, we find a nearly line
Publikováno v:
Chinese Physics Letters. 19:345-347
We have used the transverse correlated properties of the entangled photon pairs generated in the process of spontaneous parametric down-conversion, which is pumped by a femtosecond pulse laser, to perform Young's interference experiment. Unlike the c