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of 908
pro vyhledávání: '"Xu ZQ"'
Autor:
Haick H, Amal H, Ding L, Liu BB, Tisch U, Xu ZQ, Shi DY, Zhao Y, Chen J, Sun RX, Liu H, Ye SL, Tang ZY
Publikováno v:
International Journal of Nanomedicine, Vol 2012, Iss default, Pp 4135-4146 (2012)
Haitham Amal,1,‡ Lu Ding,2,‡ Bin-bin Liu,3,‡ Ulrike Tisch,1 Zhen-qin Xu,2 Da-you Shi,2 Yan Zhao,3 Jie Chen,3 Rui-xia Sun,3 Hu Liu,2 Sheng-Long Ye,3 Zhao-you Tang,3 Hossam Haick1 1Department of Chemical Engineering and Russell Berrie Nanotechnol
Externí odkaz:
https://doaj.org/article/ef0d35f1e62c4e09abb6c74bc4eed11f
Advances in the optoelectronics and information industries have allowed modern electronic devices to undergo a continuous trend toward miniaturization and integration, which poses significant challenges to today's manufacturing technologies. The rise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______363::1a37f1d7904eb29ac1af6b58b8b1414a
https://hdl.handle.net/10453/153270
https://hdl.handle.net/10453/153270
We demonstrate a two-dimensional monolayer WS efficiently coupled to a dielectric circular Bragg resonator (CBR). The coupling of the WS and CBR leads to the pronounced enhancements in both photoluminescence and second harmonic generation. 2 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______363::7280c3f5bc0f441e9f7fcea2e5024581
https://hdl.handle.net/10453/153969
https://hdl.handle.net/10453/153969
© 2020 IOP Publishing Ltd. Van der Waals heterostructures offer a unique platform to investigate light matter interaction at the nanoscale. In this work, we explore resonant energy transfer processes between van der Waals materials from two fundamen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______363::b0428e34c03f1b6365013e635a937ec3
https://hdl.handle.net/10453/145431
https://hdl.handle.net/10453/145431
© 2020 Bo Chen et al., published by De Gruyter, Berlin/Boston. Monolayer transition metal dichalcogenides (TMDs) have emerged as a promising platform for chip-integrated optoelectronics and non-linear optics. Here, we demonstrate a two-dimensional (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______363::d01170d31ee5b418f7079a9be7912dc5
https://hdl.handle.net/10453/143616
https://hdl.handle.net/10453/143616
© 2020 IOP Publishing Ltd. Graphene is often used as an acceptor in highly efficient energy transfer processes between its electrons and neighbouring optical emitters such as quantum dots, fluorescent molecules and color centres in crystals. Here we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______363::a69bdde783586b89182ca4b9743b862b
https://hdl.handle.net/10453/143744
https://hdl.handle.net/10453/143744
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Recent advances in the development of 2D-layered materials have witnessed the use of these materials as intriguing building blocks for various optoelectronic applications. The versatility of 2D mater
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______363::c2a1f5f5bf75e1f3a55710666b9c466d
https://hdl.handle.net/10453/134037
https://hdl.handle.net/10453/134037
Autor:
Ou, Q, Zhang, Y, Wang, Z, Yuwono, JA, Wang, R, Dai, Z, Li, W, Zheng, C, Xu, ZQ, Qi, X, Duhm, S, Medhekar, NV, Zhang, H, Bao, Q
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim A semiconductor p–n junction typically has a doping-induced carrier depletion region, where the doping level positively correlates with the built-in potential and negatively correlates with the dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______363::3c42bdbfbab57fc3e37a794e66fdccc4
https://hdl.handle.net/10453/133995
https://hdl.handle.net/10453/133995
Autor:
Li, Z, Zheng, J, Zhang, Y, Zheng, C, Woon, WY, Chuang, MC, Tsai, HC, Chen, CH, Davis, A, Xu, ZQ, Lin, J, Zhang, H, Bao, Q
© 2017 American Chemical Society. Lateral transition-metal dichalcogenide and their heterostructures have attracted substantial attention, but there lacks a simple approach to produce large-scaled optoelectronic devices with graded composition. In p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______363::7705fce8e2bcb1d3ba9dd76da66dddeb
https://hdl.handle.net/10453/123941
https://hdl.handle.net/10453/123941