Zobrazeno 1 - 10
of 75
pro vyhledávání: '"Xu Fa-Qiang"'
Autor:
Wang, Peng, Ni, Jing-fu, Meng, Liang, Wang, Xiao-Bo, Sheng, Chun-Qi, Zhang, Wen-Hua, Xu, Yang, Xu, Fa-Qiang, Zhu, Jun-Fa, Li, Hong-Nian
Publikováno v:
In Carbon April 2012 50(5):1762-1768
Publikováno v:
In Materials Chemistry and Physics 2005 90(1):69-72
Autor:
Cao, Liang, Wang, Yu-Zhan, Chen, Tie-Xin, Zhang, Wen-Hua, Yu, Xiao-Jiang, Ibrahim, Kurash, Wang, Jia-Ou, Qian, Hai-Jie, Xu, Fa-Qiang, Qi, Dong-Chen, Wee, Andrew T. S.
Publikováno v:
Journal of Chemical Physics; 11/7/2011, Vol. 135 Issue 17, p174701, 7p
Publikováno v:
Journal of Inorganic Materials. 27:301-304
ZnO nanowire arrays were grown on the Si(111) substrates coated with 1 nm Au catalyst by plasma as- sisted molecular beam epitaxy (MBE) through Vapor-Liquid-Solid (VLS) growth mechanism at low temperature. Field-emission scanning electron microscope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::607423f49f4531791482920cea92e061
https://doi.org/10.3724/sp.j.1077.2012.00301
https://doi.org/10.3724/sp.j.1077.2012.00301
Publikováno v:
Chinese Physics Letters. 24:2667-2670
The macro- and micro-magnetic properties of Fe–Co alloy films eletrodeposited on GaAs(100) are studied by synchrotron radiation x-ray magnetic circular dichroism (XMCD) in combination with the magneto-optical Kerr effect (MOKE) measurements and mag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad1418eaf8addd62091a51b4cdca44f4
https://doi.org/10.1088/0256-307x/24/9/057
https://doi.org/10.1088/0256-307x/24/9/057
Autor:
Li Zong-Mu, Xu Fa-Qiang
Publikováno v:
Chinese Journal of Chemistry. 23:337-340
Single-crystalline SnO2 nanowires have been successfully prepared in large scale on Au-coated silicon substrate by heating the mixture of self-made high-purity SnO2 powders and graphite powders at 900 °C. Besides the line type nanowires some more fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27d9ab158f9e7ebb15331de9ec332f0c
https://doi.org/10.1002/cjoc.200590337
https://doi.org/10.1002/cjoc.200590337
Publikováno v:
Chinese Physics. 13:2126-2129
We have studied the band structure and optical properties of 4H-SiC by using a full potential linearized augmented plane waves (FPLAPW) method. The density of states (DOS) and band structure are presented. The imaginary part of the dielectric functio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fe210974d34f5c7c02607d975354fa4
https://doi.org/10.1088/1009-1963/13/12/026
https://doi.org/10.1088/1009-1963/13/12/026
Publikováno v:
Science in China Series A: Mathematics. 44:1174-1181
The electronic structure of ZnO and its native point defects has been calculated using full potential linear Muffin-tin orbital (FP=-LMTO) method for the first time. The results show that Zn3d electrons play an important role in the bonding of ZnO. V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::accbc31bb997147b117be767aa52eca6
https://doi.org/10.1007/bf02877436
https://doi.org/10.1007/bf02877436
Publikováno v:
Acta Physica Sinica (Overseas Edition). 8:853-859
Ferromagnetic resonance (FMR) has been used to investigat the magnetism of Fe overlayer on S-passivated GaAs(100) pretreated by CH3CSNH2. Comparing with the magnetism of Fe overlayer on clean GaAs(100), we find that sulfur passivation can prevent As
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6a5543c13beeb781ad088b9be25b539
https://doi.org/10.1088/1004-423x/8/11/009
https://doi.org/10.1088/1004-423x/8/11/009
Publikováno v:
Acta Physica Sinica (Overseas Edition). 7:751-756
We have studied the interface electronic structures and the chemical reaction of the Fe overlayer deposited on S-passivated GaAs(100). The chemical bond and electronic structure are different from Fe/GaAs, and the reaction between As and Fe is weaken
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7707d3f852b10321f348f94ed77417c8
https://doi.org/10.1088/1004-423x/7/10/006
https://doi.org/10.1088/1004-423x/7/10/006