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pro vyhledávání: '"Xu,Xiaohong"'
Exciton Enhanced Giant Correlated Stoke AntiStokes Scattering of Multiorder Phonons in Semiconductor
The correlated Stoke antiStokes (SaS) scattering plays a crucial role in quantum information processing, such as heralded light sources, Fock state dynamics, and write read protocol for quantum memory. However, several reported materials exhibit low
Externí odkaz:
http://arxiv.org/abs/2411.08527
Antiferromagnetic spintronics exhibits ultra-high operational speed and stability in a magnetic field, holding promise for the realization of next-generation ultra-high-speed magnetic storage. However, theoretical exploration of the electronic transp
Externí odkaz:
http://arxiv.org/abs/2408.01618
Van der Waals multiferroic tunnel junctions (vdW-MFTJs) with multiple nonvolatile resistive states are highly suitable for new physics and next-generation storage electronics. However, currently reported vdW-MFTJs are based on two types of materials,
Externí odkaz:
http://arxiv.org/abs/2403.12845
Autor:
Xiao, Zhengyu, Xie, Ruiwen, Maccari, Fernando, Klaassen, Philipp, Eggert, Benedikt, Wang, Di, Dai, Yuting, Lizarraga, Raquel, Lill, Johanna, Helbig, Tom, Wende, Heiko, Kummer, Kurt, Ollefs, Katharina, Skokov, Konstantin, Zhang, Hongbin, Quan, Zhiyong, Xu, Xiaohong, Kruk, Robert, Hahn, Horst, Gutfleisch, Oliver, Ye, Xinglong
Rare earth-transition metal ferrimagnets, featuring antiferromagnetically coupled, inequivalent magnetic sublattices, have garnered increasing interest in the burgeoning field of ferrimagnetic spintronics. However, controlling their magnetism with lo
Externí odkaz:
http://arxiv.org/abs/2312.00643
A systematic investigation of spin injection behavior in Au/FM (FM = Fe and Ni) multilayers is performed using the superdiffusive spin transport theory. By exciting the nonmagnetic layer, the laser-induced hot electrons may transfer spin angular mome
Externí odkaz:
http://arxiv.org/abs/2308.00427
Multiferroic tunnel junctions (MFTJs) based on two-dimensional (2D) van der Waals heterostructures with sharp and clean interfaces at the atomic scale are crucial for applications in nanoscale multi-resistive logic memory devices. The recently discov
Externí odkaz:
http://arxiv.org/abs/2305.06126
Autor:
Xu, Xiaohong1,2 (AUTHOR) xxhh102505@163.com, Zhang, Yufan1 (AUTHOR) snowdrop1122@163.com, Zhang, Xueyuan1 (AUTHOR)
Publikováno v:
Molecules. Dec2024, Vol. 29 Issue 23, p5553. 9p.
Publikováno v:
In SLAS Technology December 2024 29(6)
Autor:
Lan, Yan a, 1, Pei, Qiao a, 1, Lei, Yanjin a, Li, Liang a, Zhang, Yi b, Xu, Xiaohong b, Peng, Shaobing a, ⁎
Publikováno v:
In Scientia Horticulturae 1 December 2024 338
Autor:
Wang, Yao, Liang, Yijia, Ma, Xingjun, Dong, Yanling, Klakong, Matthana, Wang, Anbin, Chen, Mengle, Fan, Tianyu, Xu, Xiaohong, Xiao, Peng, Ding, Wei
Publikováno v:
In Industrial Crops & Products 15 November 2024 220