Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Xiyan Pan"'
Autor:
Lixiu Zhang, Luyao Mei, Kaiyang Wang, Yinhua Lv, Shuai Zhang, Yaxiao Lian, Xiaoke Liu, Zhiwei Ma, Guanjun Xiao, Qiang Liu, Shuaibo Zhai, Shengli Zhang, Gengling Liu, Ligang Yuan, Bingbing Guo, Ziming Chen, Keyu Wei, Aqiang Liu, Shizhong Yue, Guangda Niu, Xiyan Pan, Jie Sun, Yong Hua, Wu-Qiang Wu, Dawei Di, Baodan Zhao, Jianjun Tian, Zhijie Wang, Yang Yang, Liang Chu, Mingjian Yuan, Haibo Zeng, Hin-Lap Yip, Keyou Yan, Wentao Xu, Lu Zhu, Wenhua Zhang, Guichuan Xing, Feng Gao, Liming Ding
Publikováno v:
Nano-Micro Letters, Vol 15, Iss 1, Pp 1-48 (2023)
Highlights A comprehensive summary of the representative promising applications of metal halide perovskite materials, including traditional optoelectronic devices (solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technolo
Externí odkaz:
https://doaj.org/article/9cdc47fcf2d348beafcd97d25f8384b8
Autor:
Dingjun Wu, Yongchang Xu, Hai Zhou, Xin Feng, Jianqiang Zhang, Xiyan Pan, Zheng Gao, Rui Wang, Guokun Ma, Li Tao, Hanbin Wang, Jinxia Duan, Houzhao Wan, Jun Zhang, Liangping Shen, Hao Wang, Tianyou Zhai
Publikováno v:
InfoMat, Vol 4, Iss 9, Pp n/a-n/a (2022)
Abstract Photodetectors (PDs) based on perovskite nanowires are among the most promising next‐generation photodetection technologies; however, their poor long‐term stability is the biggest challenge limiting their commercial application. Herein,
Externí odkaz:
https://doaj.org/article/24be4777193c4a4d957da19d657a195f
Autor:
Xiyan Pan, Jianqiang Zhang, Hai Zhou, Ronghuan Liu, Dingjun Wu, Rui Wang, Liangping Shen, Li Tao, Jun Zhang, Hao Wang
Publikováno v:
Nano-Micro Letters, Vol 13, Iss 1, Pp 1-12 (2021)
Abstract The carrier transport layer with reflection reduction morphology has attracted extensive attention for improving the utilization of light. Herein, we introduced single-layer hollow ZnO hemisphere arrays (ZHAs) behaving light trapping effect
Externí odkaz:
https://doaj.org/article/f8fa0097f2a7478cb7afb1d6ea9f55b0
Autor:
Chuantian Zuo, Lixiu Zhang, Xiyan Pan, He Tian, Keyou Yan, Yuanhang Cheng, Zhiwen Jin, Chenyi Yi, Xiaoliang Zhang, Wu-Qiang Wu, Qinye Bao, Liyuan Han, Liming Ding
Publikováno v:
Nano Research.
Autor:
Hao Wang, Houzhao Wan, Junpeng Zeng, Guokun Ma, Jie Ji, Ziqi Zhang, Ao Chen, Zhiying Yu, Yiheng Rao, Chen Dalei, Xiyan Pan, Xiao-Niu Peng, Jinxia Duan, Ting-Chang Chang, Li Tao, Qiuyang Tan
Publikováno v:
Ceramics International. 47:22677-22682
NbO2-based selectors can effectively suppress cross-talk interference between memory cells in the high-density cross-point nonvolatile memory arrays. By doping titanium into the niobium oxide, the Pt/Ti:NbOx/TiN selector device based on insulator–m
Publikováno v:
Science China Materials. 64:393-399
As a lead-free perovskite, CsBi3I10 has attracted significant attention because of its high thermal tolerance and long electron diffusion length. Solution-processed high-performance CsBi3I10 perovskite devices, however, are hindered by the formation
Autor:
Haibo Zeng, Zehao Song, Dingjun Wu, Hai Zhou, Hao Wang, Xiaoming Li, Meng Zheng, Houzhao Wan, Ronghuan Liu, Xiyan Pan, Jun Zhang
Publikováno v:
ACS Nano. 14:2777-2787
Compared with a single nanowire (NW) or NW array, the simpler preparation process of an NW network (NWN) enables it to be fabricated in large-scale, flexible, and wearable applications of photodetectors (PDs). However, the NWN behaves many microinter
Publikováno v:
ACS Applied Materials & Interfaces. 12:4843-4848
Organic-inorganic hybrid lead halide perovskites have attracted much attention in the photoelectric field due to their excellent characteristics, such as a tunable band gap, simple fabrication process, and high photoelectric conversion efficiency. Ho
Autor:
Dingjun Wu, Zehao Song, Hai Zhou, Xiaohan Yang, Xiaoming Tang, Ronghuan Liu, Hao Wang, Xiyan Pan
Publikováno v:
Journal of Materials Chemistry C. 8:2028-2035
Organic–inorganic metal halide perovskites have achieved great success in applications such as light-emitting diodes, photodetectors (PDs) and solar cells due to their high light absorption coefficients, tunable band gaps and simple solution-proces
Publikováno v:
Journal of Semiconductors. 43:030203