Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Xixing Wen"'
Autor:
Lingbin Xie, Longlu Wang, Xia Liu, Jianmei Chen, Xixing Wen, Weiwei Zhao, Shujuan Liu, Qiang Zhao
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-14 (2024)
Abstract Anion exchange membrane (AEM) water electrolysis employing non-precious metal electrocatalysts is a promising strategy for achieving sustainable hydrogen production. However, it still suffers from many challenges, including sluggish alkaline
Externí odkaz:
https://doaj.org/article/e449c19443f54f4db6b82fd42a7eb3c1
Autor:
Xixing Wen, Chao Chen, Shuaicheng Lu, Kanghua Li, Rokas Kondrotas, Yang Zhao, Wenhao Chen, Liang Gao, Chong Wang, Jun Zhang, Guangda Niu, Jiang Tang
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-10 (2018)
Antimony selenide possess several advantages for solar cell applications but state-of-the-art vapor transport deposition methods suffer from poor film quality. Here Wen et al. develop a fast and cheap method to reduce the defect density by 10 times a
Externí odkaz:
https://doaj.org/article/abe4fac3b95542658ed1896d1b7edd34
Autor:
Sandip Singh Bista, Deng-Bing Li, Suman Rijal, Sabin Neupane, Rasha A. Awni, Chun-Sheng Jiang, Chuanxiao Xiao, Kamala Khanal Subedi, Zhaoning Song, Adam B. Phillips, Xixing Wen, Randall J. Ellingson, Michael J. Heben, Yanfa Yan
Publikováno v:
ACS Applied Energy Materials. 6:885-891
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17209624e6dfcf068a956f7f9f45d9f6
https://doi.org/10.1021/acsaem.2c03287
https://doi.org/10.1021/acsaem.2c03287
Autor:
Zonghuan Lu, Lihua Zhang, Xixing Wen, Atharv Jog, Kim Kisslinger, Lei Gao, Jian Shi, Daniel Gall, Morris A. Washington, Gwo-Ching Wang, Toh-Ming Lu
Publikováno v:
ACS Applied Electronic Materials. 4:5775-5788
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb0991b99e34a0cc27bd9ca16e9c9bec
https://doi.org/10.1021/acsaelm.2c00963
https://doi.org/10.1021/acsaelm.2c00963
Autor:
Lifu Zhang, Jie Jiang, Yang Hu, Zonghuan Lu, Xixing Wen, Saloni Pendse, Ru Jia, Gwo-Ching Wang, Toh-Ming Lu, Jian Shi
Publikováno v:
Journal of the American Chemical Society. 144(38)
2D Ruddlesden-Popper (RP) halide perovskites with natural multiple quantum well structures are an ideal platform to integrate into vertical heterostructures, which may introduce plentiful intriguing optoelectronic properties that are not accessible i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::628d19d1bca430da9d5b1e6916be59e9
https://pubmed.ncbi.nlm.nih.gov/36099192
https://pubmed.ncbi.nlm.nih.gov/36099192
Autor:
Nikhil Koratkar, Xixing Wen, Dongxue Chen, Zonghuan Lu, Su-Fei Shi, Damien West, Shengbai Zhang, Hanzhi Shang, Harry Efstathiadis, Xin Sun, Tushar Gupta, Tianmeng Wang, Toh-Ming Lu, Debjit Ghoshal
Publikováno v:
ACS Applied Materials & Interfaces. 13:32450-32460
Lead iodide (PbI2) as a layered material has emerged as an excellent candidate for optoelectronics in the visible and ultraviolet regime. Micrometer-sized flakes synthesized by mechanical exfoliation from bulk crystals or by physical vapor deposition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bd53d25ce8d7afc6af83a3f6bd2f3e7
https://doi.org/10.1021/acsami.1c05734
https://doi.org/10.1021/acsami.1c05734
Autor:
Xuegang Chen, Zonghuan Lu, Xixing Wen, Yu Xiang, Ishwara Bhat, Morris Washington, Toh-Ming Lu, Gwo-Ching Wang
Publikováno v:
Thin Solid Films. 772:139807
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adfc26c3d3519cb9bbf71b1b3df639fa
https://doi.org/10.1016/j.tsf.2023.139807
https://doi.org/10.1016/j.tsf.2023.139807
Autor:
Xixing Wen, Zonghuan Lu, Bingxiang Li, Gwo-Ching Wang, Morris A. Washington, Qiang Zhao, Toh-Ming Lu
Publikováno v:
Chemical Engineering Journal. 462:142026
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::580f33d14561d9bc8fa55f9a89b63cac
https://doi.org/10.1016/j.cej.2023.142026
https://doi.org/10.1016/j.cej.2023.142026
Publikováno v:
ACS Applied Materials & Interfaces. 12:35222-35231
The V–VI binary chalcogenide, Sb2Se3, has attracted considerable attention for its applications in thin film optoelectronic devices because of its unique 1D structure and remarkable optoelectronic properties. Herein, we report an Sb2Se3 thin film e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8eaabd11acdd17cb8f57cb9383e62fd2
https://doi.org/10.1021/acsami.0c08467
https://doi.org/10.1021/acsami.0c08467
Publikováno v:
ACS Applied Electronic Materials. 2:1635-1644
As an excellent semiconductor material with low band gap and high carrier mobility, germanium is widely used in the semiconductor industry in photoelectronic devices, high-frequency radio frequency...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f9d246e62306faa260df4dbf9c0b581
https://doi.org/10.1021/acsaelm.0c00219
https://doi.org/10.1021/acsaelm.0c00219