Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Xiuming Dou"'
Autor:
Xiangjun Shang, Shulun Li, Hanqing Liu, Xiangbin Su, Huiming Hao, Deyan Dai, Xiaoming Li, Yuanyuan Li, Yuanfei Gao, Xiuming Dou, Haiqiao Ni, Zhichuan Niu
Publikováno v:
Nanomaterials, Vol 12, Iss 7, p 1219 (2022)
In this work, we develop single-mode fiber devices of an InAs/GaAs quantum dot (QD) by bonding a fiber array with large smooth facet, small core, and small numerical aperture to QDs in a distributed Bragg reflector planar cavity with vertical light e
Externí odkaz:
https://doaj.org/article/e9dc848ea06d490fb4743f5a914103f8
Autor:
Xiangjun Shang, Shulun Li, Hanqing Liu, Ben Ma, Xiangbin Su, Yao Chen, Jiaxin Shen, Huiming Hao, Bing Liu, Xiuming Dou, Yang Ji, Baoquan Sun, Haiqiao Ni, Zhichuan Niu
Publikováno v:
Crystals, Vol 11, Iss 10, p 1194 (2021)
The sacrificed-QD-layer method can well control the indium deposition amount to grow InAs quantum dots (QDs) with isotropic geometry. Individual Si dopant above an (001)-based InAs QD proves a new method to build a local electric field to reduce fine
Externí odkaz:
https://doaj.org/article/cef596c0f70d477ea2d8a853057f9610
Autor:
Dan Su, Xiuming Dou, Xuefei Wu, Yongping Liao, Pengyu Zhou, Kun Ding, Haiqiao Ni, Zhichuan Niu, Haijun Zhu, Desheng Jiang, Baoquan Sun
Publikováno v:
AIP Advances, Vol 6, Iss 4, Pp 045204-045204-5 (2016)
Exciton and biexciton emission energies as well as excitonic fine-structure splitting (FSS) in single InAs/GaAs quantum dots (QDs) have been continuously tuned in situ in an optical cryostat using a developed uniaxial stress device. With increasing t
Externí odkaz:
https://doaj.org/article/fb545099bf184b3b92c88d367c346cf0
Publikováno v:
The Journal of Physical Chemistry C. 126:15319-15326
Autor:
Ping-Heng Tan, Jia-Min Lai, Baoquan Sun, Xue-Lu Liu, Weibo Gao, Igor Aharonovich, Xiuming Dou, Yongzhou Xue, Hui-Xiong Deng, Jun Zhang, Qing-Hai Tan, Dan Guo
Publikováno v:
Nano Letters. 22:1331-1337
Quantum emitters are needed for a myriad of applications ranging from quantum sensing to quantum computing. Hexagonal boron nitride (hBN) quantum emitters are one of the most promising solid-state platforms to date due to their high brightness and st
Publikováno v:
The Journal of Physical Chemistry C. 125:11043-11047
Single-photon emitters (SPEs) are one of the building blocks in quantum information processing. Here, we report detailed experimental optical properties of the SPEs in aluminum nitride (AlN) films at 10 K. The high-quality AlN films are grown by meta
Autor:
Yuhua Shen, Xiuming Dou, Baoquan Sun, Qingli Zhang, Pengyu Zhou, Jian Wang, Dandan Han, Bao Liu
Publikováno v:
Physical Chemistry Chemical Physics. 23:23380-23388
The pressure- and temperature-dependent luminescence properties of M′-phase Nd3+:YTaO4 synthesized by a molten salt method are presented. Ten near-infrared emission lines originating from the transitions between the two Stark levels R1,2 of the 3F3
Publikováno v:
Applied Physics Letters. 122:012104
We use AlAs sacrificial layer etching technology to peel a film of In0.15Ga0.85As/GaAs single quantum wells (QWs) from a GaAs substrate and transfer the film to a Si wafer covered with randomly distributed Au nanoparticles. In this way, local strains
Autor:
Xiangjun Shang, Shulun Li, Hanqing Liu, Xiangbin Su, Huiming Hao, Deyan Dai, Xiaoming Li, Yuanyuan Li, Yuanfei Gao, Xiuming Dou, Haiqiao Ni, Zhichuan Niu
Publikováno v:
Nanomaterials; Volume 12; Issue 7; Pages: 1219
In this work, we develop single-mode fiber devices of an InAs/GaAs quantum dot (QD) by bonding a fiber array with large smooth facet, small core, and small numerical aperture to QDs in a distributed Bragg reflector planar cavity with vertical light e
Autor:
Pengyu, Zhou, Qingli, Zhang, Xiuming, Dou, Jian, Wang, Baoquan, Sun, Yuhua, Shen, Bao, Liu, Dandan, Han
Publikováno v:
Physical chemistry chemical physics : PCCP. 23(40)
The pressure- and temperature-dependent luminescence properties of M'-phase Nd