Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Xiufei Hu"'
Autor:
Yingnan Wang, Xiufei Hu, Lei Ge, Zonghao Liu, Mingsheng Xu, Yan Peng, Bin Li, Yiqiu Yang, Shuqiang Li, Xuejian Xie, Xiwei Wang, Xiangang Xu, Xiaobo Hu
Publikováno v:
Crystals, Vol 13, Iss 3, p 500 (2023)
With the increased power density of gallium nitride (GaN) high electron mobility transistors (HEMTs), effective cooling is required to eliminate the self-heating effect. Incorporating diamond into GaN HEMT is an alternative way to dissipate the heat
Externí odkaz:
https://doaj.org/article/3ec5fe4949e7419ca53e36702a664a1a
Autor:
Xiaotong Han, Yan Peng, Xiwei Wang, Peng Duan, Xiufei Hu, Yiqiu Yang, Bin Li, Xiangang Xu, Xiaobo Hu, Dufu Wang
Publikováno v:
Journal of Electronic Materials. 51:4995-5004
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2dc2d115f733ddc822b461b1fb63272
https://doi.org/10.1007/s11664-022-09735-z
https://doi.org/10.1007/s11664-022-09735-z
Autor:
Xiufei Hu, Ming Li, Yingnan Wang, Yan Peng, Gongbin Tang, Xiwei Wang, Bin Li, Yiqiu Yang, Mingsheng Xu, Xiangang Xu, Jisheng Han, Kuan Yew Cheong
Publikováno v:
Vacuum. 211:111895
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a97d1664faee8b0d4c74fdfbee066b86
https://doi.org/10.1016/j.vacuum.2023.111895
https://doi.org/10.1016/j.vacuum.2023.111895
Publikováno v:
Crystallography Reports. 65:1231-1236
The minority carrier lifetimes in lightly N-doped n-type and V-doped semi-insulating 4H-SiC crystals were measured by microwave photo-conductance decay method. The resistivity mapping of the n-type 4H-SiC wafer lightly doped with nitrogen was examine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcce1f06b5dac821d5714c7a1cc3583d
https://doi.org/10.1134/s1063774520070305
https://doi.org/10.1134/s1063774520070305
Autor:
Xiufei Hu, Yingnan Wang, Yan Peng, Kuan Yew Cheong, Jisheng Han, Xiwei Wang, Bin Li, Yiqiu Yang, Mingsheng Xu, Xiangang Xu
Publikováno v:
Japanese Journal of Applied Physics. 62:SC0802
Diamond-silicon carbide (SiC) composite stacks are composed of two kinds of wide-bandgap materials, each of which has excellent thermal, electronic, optical, and mechanical properties, and is considered an ideal material for heat dissipation. For opt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ee62a32bbb6387d943b627b52c61f9c
https://doi.org/10.35848/1347-4065/aca67d
https://doi.org/10.35848/1347-4065/aca67d
Autor:
Xiangang Xu, Xiufei Hu, Peng Duan, Dufu Wang, Xiaobo Hu, Jinying Yu, Xuejian Xie, Yan Peng, Xiaotong Han, Xiwei Wang
Publikováno v:
Materials, Vol 13, Iss 4510, p 4510 (2020)
Materials
Volume 13
Issue 20
Materials
Volume 13
Issue 20
We report herein high-resolution x-ray diffraction measurements of basal plane bending of homoepitaxial single-crystal diamond (SCD). The results reveal that growth parameters such as temperature, growth time and basal plane bending of the substrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55569bebd72fabd7e380678d9824ced9
https://www.mdpi.com/1996-1944/13/20/4510
https://www.mdpi.com/1996-1944/13/20/4510