Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Xiucheng Wei"'
Autor:
Zihao Yang, Xiucheng Wei, Pinku Roy, Di Zhang, Ping Lu, Samyak Dhole, Haiyan Wang, Nicholas Cucciniello, Nag Patibandla, Zhebo Chen, Hao Zeng, Quanxi Jia, Mingwei Zhu
Publikováno v:
Materials, Vol 16, Iss 23, p 7468 (2023)
We report a milestone in achieving large-scale, ultrathin (~5 nm) superconducting NbN thin films on 300 mm Si wafers using a high-volume manufacturing (HVM) industrial physical vapor deposition (PVD) system. The NbN thin films possess remarkable stru
Externí odkaz:
https://doaj.org/article/3d301a6fc16b446e9b211213df234411
Autor:
Xiucheng Wei, Pinku Roy, Zihao Yang, Di Zhang, Zihao He, Ping Lu, Olivia Licata, Haiyan Wang, Baishakhi Mazumder, Nag Patibandla, Yong Cao, Hao Zeng, Mingwei Zhu, Quanxi Jia
Publikováno v:
Materials Research Letters, Vol 9, Iss 8, Pp 336-342 (2021)
Ultrathin (5–50 nm) epitaxial superconducting niobium nitride (NbN) films were grown on AlN-buffered c-plane Al2O3 by an industrial scale physical vapor deposition technique at 400°C. Both X-ray diffraction and scanning electron microscopy analysi
Externí odkaz:
https://doaj.org/article/af981c970391493281c355ab2aa73205
Autor:
Samyak Dhole, Xiucheng Wei, Haolei Hui, Pinku Roy, Zachary Corey, Yongqiang Wang, Wanyi Nie, Aiping Chen, Hao Zeng, Quanxi Jia
Publikováno v:
Photonics, Vol 10, Iss 4, p 366 (2023)
The prototypical chalcogenide perovskite, BaZrS3 (BZS), with its direct bandgap of 1.7–1.8 eV, high chemical stability, and strong light–matter interactions, has garnered significant interest over the past few years. So far, attempts to grow BaZr
Externí odkaz:
https://doaj.org/article/87ce7a864843441eb9fc8c6701422aef
Autor:
Xiucheng Wei, Haolei Hui, Samanthe Perera, Aaron Sheng, David F. Watson, Yi-Yang Sun, Quanxi Jia, Shengbai Zhang, Hao Zeng
Publikováno v:
ACS Omega, Vol 5, Iss 30, Pp 18579-18583 (2020)
Externí odkaz:
https://doaj.org/article/2291a60d06b74959a991d5566d364804
Autor:
Olivia Licata, Zihao He, Patibandla Nag B, Baishakhi Mazumder, Xiucheng Wei, Mingwei Zhu, Pinku Roy, Cao Yong, Di Zhang, Quanxi Jia, Ping Lu, Haiyan Wang, Zihao Yang, Hao Zeng
Publikováno v:
Materials Research Letters, Vol 9, Iss 8, Pp 336-342 (2021)
Ultrathin (5–50 nm) epitaxial superconducting niobium nitride (NbN) films were grown on AlN-buffered c-plane Al2O3 by an industrial scale physical vapor deposition technique at 400°C. Both X-ray diffraction and scanning electron microscopy analysi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc2ee5888fb6688530a7c8d388af7ad4
Autor:
Guang Tian, Jie Yang, Jinbo Yang, Yongqiang Wang, Chao Yun, Ziyao Zhou, Xingyao Gao, Hao Zeng, Shishun Zhao, Haiyan Wang, Quanxi Jia, Kelvin H. L. Zhang, Ping Lu, Tuhin Maity, Ahmed Kursumovic, Zengyao Ren, Judith L. MacManus-Driscoll, Di Zhang, Ming Liu, Rui Wu, Xiucheng Wei, Weiwei Li
Publikováno v:
Nature Electronics. 4:333-341
Magnetoelectric systems could be used to develop magnetoelectric random access memory and microsensor devices. One promising system is the two-phase 3-1-type multiferroic nanocomposite in which a one-dimensional magnetic column is embedded in a three
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f0b5761e6f664d0d2a7944a252db0c5
https://doi.org/10.1038/s41928-021-00584-y
https://doi.org/10.1038/s41928-021-00584-y
Autor:
Olivia G. Licata, Jith Sarker, Mukesh Bachhav, Pinku Roy, Xiucheng Wei, Zihao Yang, Nag Patibandla, Hao Zeng, Mingwei Zhu, Quanxi Jia, Baishakhi Mazumder
Publikováno v:
Materials Chemistry and Physics. 282:125962
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45427135e3a3fd7127d4691234481ecc
https://doi.org/10.1016/j.matchemphys.2022.125962
https://doi.org/10.1016/j.matchemphys.2022.125962
Autor:
Yi-Yang Sun, Quanxi Jia, Xiucheng Wei, Aaron Sheng, Hao Zeng, Samanthe Perera, Haolei Hui, Shengbai Zhang, David F. Watson
Publikováno v:
ACS Omega
ACS Omega, Vol 5, Iss 30, Pp 18579-18583 (2020)
ACS Omega, Vol 5, Iss 30, Pp 18579-18583 (2020)
BaZrS3, a prototypical chalcogenide perovskite, has been shown to possess a direct band gap, an exceptionally strong near band edge light absorption, and good carrier transport. Coupled with its great stability, nontoxicity with earth-abundant elemen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::57b1fc754569af4a9218e643f721b72c
http://arxiv.org/abs/2004.04261
http://arxiv.org/abs/2004.04261
Autor:
Ping Lu, Quanxi Jia, Ming Liu, Rui Wu, Jie Yang, Judith L. MacManus-Driscoll, Xiucheng Wei, Guang Tian, Hao Zeng, Di Zhang, Kelvin H. L. Zhang, Chao Yun, Zengyao Ren, Ziyao Zhou, Jinbo Yang, Weiwei Li, Tuhin Maity, Haiyan Wang, Ahmed Kursumovic, Yongqiang Wang, Xingyao Gao, Shishun Zhao
Publikováno v:
Nature Electronics. 4:448-448
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a78a81b6146413ab5892d7883dd8f9e
https://doi.org/10.1038/s41928-021-00609-6
https://doi.org/10.1038/s41928-021-00609-6
Publikováno v:
GEOPHYSICS. 82:U13-U23
Removing near-surface effects in the processing of 3C data is key to exploiting the information provided by converted waves. Particularly for the case of the PS-mode, converted energy travels back to the surface as S-waves. Therefore, S-wave static c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::998a32092697770750620741bdab1568
https://doi.org/10.1190/geo2016-0278.1
https://doi.org/10.1190/geo2016-0278.1