Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Xiu-jian Chou"'
Publikováno v:
Chinese Journal of Liquid Crystal and Displays. 36:272-278
Publikováno v:
2021 Photonics & Electromagnetics Research Symposium (PIERS).
Publikováno v:
Journal of Nano Research. 46:57-63
This paper presents a type of Ag/polydimethylsiloxane (Ag/PDMS) nanocomposite material for use in strain gauge element applications. In these elements, the Ag nanoparticles work as conductive elements by electron tunneling and the PDMS forms the tunn
Publikováno v:
Key Engineering Materials. 503:97-102
Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films were prepared on platinized silicon substrates by sol–gel methods. Films showed polycrystalline perovskite structure with a strong (100) preferred orientation. The antiferroelectric nature
Publikováno v:
Key Engineering Materials. 503:369-374
Piezoelectric thin films cantilevers with a central Si mass are designed for harvesting vibration energy applications. Through the theoretic analyzer and MATLAB simulation, the displacement, resonance frequency and maximum stress dependent of the dif
Publikováno v:
Key Engineering Materials. 503:375-380
(Pb,La)(Zr,Ti)O3antiferroelectric thick films were prepared on Pt (111)/ Ti/SiO2/Si (100) substrates by a sol-gel process. The effects of single annealing and multistep annealing on the structures and electric properties of the films were investigate
Publikováno v:
Applied Mechanics and Materials. :13-17
(Pb, La) (Zr, Ti)O3 (PLZT) antiferroelectric thick films were deposited on Pt (111)/ Ti/SiO2/Si (100) substrates via sol-gel process. X-ray diffraction (XRD) analysis indicated that the films derived on Pt (111)/ Ti/SiO2/Si (100) substrates showed st
Publikováno v:
Advanced Materials Research. :2460-2463
Pb0.97La0.02Zr0.95Ti0.05O3(PLZT) antiferroelectric thin films were prepared on Pt (111)/ Ti/SiO2/Si (100) substrates by a sol-gel process. The influences of annealing temperature on the structures and dielectric properties of the PLZT antiferroelectr
Publikováno v:
Advanced Materials Research. :2467-2471
By the sol-gel process, Pb0.97La0.02(Zr0.95Ti0.05)O3(PLZT) antiferroelectric (AFE) thin films with different thicknesses were successfully deposited on Pt(111)/Ti/SiO2/Si(100) substrates. The phase structure of the PLZT antiferroelectric thin films w
Publikováno v:
Materials Research Bulletin. 44:566-570
In this study, we tried to lower the sintering temperature of Ba0.6Sr0.4TiO3 (BST) ceramics by several kinds of adding methods of Bi2O3, CuO and CuBi2O4 additives. The effects of different adding methods on the microstructures and the dielectric prop