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Autor:
Jianqun Yang, Lei Dong, Yuan-Ting Huang, Tao Ying, Xueqiang Yu, Xingji Li, Li Weiqi, Xiu-Hai Cui
Publikováno v:
Chinese Physics B. 31:028502
The effects of radiation on 3CG110 PNP bipolar junction transistors (BJTs) are characterized using 50-MeV protons, 40-MeV Si ions, and 1-MeV electrons. In this paper, electrical characteristics and deep level transient spectroscopy (DLTS) are utilize