Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Xishuo Zhang"'
Autor:
Xiaodong Hao, Qiheng Ma, Xishuo Zhang, Jiahui Wang, Yuhao Zhou, Yang Xu, Shufang Ma, Bingshe Xu
Publikováno v:
Next Materials, Vol 2, Iss , Pp 100063- (2024)
The pursuit of optimal bandgap and band edge positions is crucial for effective photocatalytic catalysts, leading to significant attentions in both experimental and theoretical research on modulating the band structure of semiconductor photocatalysts
Externí odkaz:
https://doaj.org/article/aa912ede1bfc447ea65fe2857ecf1652
Autor:
Xiaodong Hao, Xishuo Zhang, Yang Xu, Yuhao Zhou, Tingting Wei, Zhuangzhuang Hu, Lei Wu, Xinyi Feng, Jin Zhang, Yi Liu, Deqiang Yin, Shufang Ma, Bingshe Xu
Publikováno v:
Journal of Colloid and Interface Science. 643:282-291
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4ba9e2061c75cb697b792d4620ec5a9
https://doi.org/10.1016/j.jcis.2023.04.023
https://doi.org/10.1016/j.jcis.2023.04.023
Autor:
Yang Xu, Xiaodong Hao, Xishuo Zhang, Tong Wang, Zhuangzhuang Hu, Yujiao Chen, Xinyi Feng, Wen Liu, Fangyuan Hao, Xingang Kong, Chaozheng He, Shufang Ma, Bingshe Xu
Publikováno v:
CrystEngComm. 24:3369-3379
A good-performance and low-cost electrocatalyst Ni–rGO/CeO2 has been achieved due to the increased oxygen vacancies and active sites brought about by the synergistic effect of rGO decoration and Ni doping.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bfe80302158707d13ed822b370cbb8e
https://doi.org/10.1039/d2ce00209d
https://doi.org/10.1039/d2ce00209d
Autor:
Shuai Zhang, Shufang Ma, Ben Cao, Qiandong Zhuang, Yang Xu, Jiahui Wang, Xishuo Zhang, Xiaoye Nan, Xiaodong Hao, Bingshe Xu
The bottom-up preparation of two-dimensional material micro-nano structures at scale facilitates the realisation of integrated applications in optoelectronic devices. Fibrous Phosphorus (FP), an allotrope of black phosphorus (BP), is one of the most
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d30c6f84de67480d0f748f8b238e67d
https://doi.org/10.1002/ange.202217127
https://doi.org/10.1002/ange.202217127
Autor:
Xiaodong Hao, Xishuo Zhang, Benyao Sun, Deqiang Yin, Hailiang Dong, Jiahui Wang, Biao Huang, Yang Xu, Hengsheng Shan, Shufang Ma, Chunlin Chen, Bingshe Xu
Publikováno v:
ACS applied materialsinterfaces. 14(50)
The model system of the InGaN/GaN quantum wells (QWs), based on the first principles calculation, was chosen to understand the underlying mechanism of interfacial polarization and its synergic effect with the built-in electric field (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d865b7c9f3ba2a42e9a43ea3f947473e
https://pubmed.ncbi.nlm.nih.gov/36509550
https://pubmed.ncbi.nlm.nih.gov/36509550