Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Xiongliang Wei"'
Autor:
Syed Ahmed Al Muyeed, Wei Sun, Xiongliang Wei, Renbo Song, Daniel D. Koleske, Nelson Tansu, Jonathan J. Wierer Jr.
Publikováno v:
AIP Advances, Vol 7, Iss 10, Pp 105312-105312-7 (2017)
Data are presented on strain compensation in InGaN-based multiple quantum wells (MQW) using AlGaN interlayers (ILs). The MQWs consist of five periods of InxGa1-xN/AlyGa1-yN/GaN emitting in the green (λ ∼ 535 nm ± 15 nm), and the AlyGa1-yN IL has
Externí odkaz:
https://doaj.org/article/5b63c8f31fe64e49b8424f4fa167da9e
Autor:
Damir Borovac, Jonathan J. Wierer, Renbo Song, Xiongliang Wei, Syed Ahmed Al Muyeed, Haotian Xue, Nelson Tansu
Publikováno v:
IEEE Journal of Quantum Electronics. 57:1-7
The recombination rates in an In0.25Ga0.75N/Al0.48Ga0.52N/GaN multiple quantum well (MQW) structure are measured to identify the cause of low efficiencies in high In-content InGaN quantum wells. The MQWs emit from 640 to 565 nm and are grown using me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2113ccdbcba853649d6a4d4ff3ea5ab5
https://doi.org/10.1109/jqe.2021.3111402
https://doi.org/10.1109/jqe.2021.3111402
Publikováno v:
Materials
Volume 16
Issue 5
Pages: 1890
Volume 16
Issue 5
Pages: 1890
Traditional methods for synthesizing InGaN quantum dots (QDs), such as the Stranski-Krastanov growth, often result in QD ensembles with low density and non-uniform size distribution. To overcome these challenges, forming QDs using photoelectrochemica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7acf68cd78b3feadeef1a3ca2758fcd
https://doi.org/10.3390/ma16051890
https://doi.org/10.3390/ma16051890
Publikováno v:
ACS Applied Electronic Materials. 1:1367-1371
The oxidation of semiconductors is a fundamental building block of many modern electronic devices. The prime example is the oxidation of silicon into silicon dioxide, which is used as a gate dielec...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62a32552af0940e01cd50d43b3f12a05
https://doi.org/10.1021/acsaelm.9b00266
https://doi.org/10.1021/acsaelm.9b00266
Autor:
Nelson Tansu, Syed Ahmed Al Muyeed, Damir Borovac, Jonathan J. Wierer, Xiongliang Wei, Renbo Song, Haotian Xue
Publikováno v:
Light-Emitting Devices, Materials, and Applications XXV.
Controlled growth and increased radiative recombination rates of InGaN quantum dots (QDs) are demonstrated. The InGaN QDs are grown by a self-assembly (SA) method using metal-organic chemical vapor deposition on planar GaN and photoelectrochemically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e4484c0f3fe60a95563b89ca14ccd57
https://doi.org/10.1117/12.2585038
https://doi.org/10.1117/12.2585038
Autor:
Nelson Tansu, Elia Palmese, Jonathan J. Wierer, Xiongliang Wei, Haotian Xue, Syed Ahmed Al Muyeed, Renbo Song
Publikováno v:
Photonics Research. 10:33
Near-infrared electroluminescence of InGaN quantum dots (QDs) formed by controlled growth on photoelectrochemical (PEC) etched QD templates is demonstrated. The QD template consists of PEC InGaN QDs with high density and controlled sizes, an AlGaN ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47bde9d266e7e7cf8ea000775e7cb0d4
https://doi.org/10.1364/prj.441122
https://doi.org/10.1364/prj.441122
Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates
Autor:
Syed Ahmed Al Muyeed, Nelson Tansu, Xiongliang Wei, Renbo Song, Damir Borovac, Jonathan J. Wierer
Publikováno v:
Journal of Crystal Growth. 540:125652
Controlled growth of InGaN quantum dots (QDs) using photoelectrochemically (PEC) etched InGaN QD templates is demonstrated. The InGaN QDs are grown by a self-assembly (SA) method using metal-organic chemical vapor deposition on templates consisting o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91d4cc63161d475d954706129afa292b
https://doi.org/10.1016/j.jcrysgro.2020.125652
https://doi.org/10.1016/j.jcrysgro.2020.125652
Publikováno v:
2018 IEEE Photonics Conference (IPC).
InGaN quantum dots formed by quantum-size controlled photoelectrochemical etching are demonstrated. The QDs are capped with AlGaN/GaN passivation layers to reduce surface recombination These QDs are small-sized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97a803997cc2d6fc590f4f584f2e0ac6
https://doi.org/10.1109/ipcon.2018.8527308
https://doi.org/10.1109/ipcon.2018.8527308
Autor:
Syed Ahmed Al Muyeed, Wei Sun, Nelson Tansu, Jonathan J. Wierer, Renbo Song, Xiongliang Wei, Daniel D. Koleske
Publikováno v:
2018 IEEE Photonics Conference (IPC).
Al y Ga 1-y N interlayers are used on top of In x Ga 1-x N quantum wells as strain compensating layers to force pseudomorphic growth of the entire InGaN/AlGaN/GaN multiple quantum well stack. This leads to lower defect formation and higher radiative
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::253dbf27050817bf4205ecb34eed57a3
https://doi.org/10.1109/ipcon.2018.8527340
https://doi.org/10.1109/ipcon.2018.8527340
Autor:
Syed Ahmed Al Muyeed, Jonathan J. Wierer, Renbo Song, Rebecca M. Lentz, Xiongliang Wei, Wei Sun, Matthew R. Peart, Nelson Tansu, Damir Borovac
Publikováno v:
Journal of Applied Physics. 126:213106
The recombination rates in InGaN/AlGaN/GaN multiple quantum wells (MQWs) emitting in the green-yellow and grown with different Al compositions in the AlGaN interlayer (IL) are shown. By transforming measurements on radiative efficiency, absorption, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b03d3c2ae0646ce28a8bef00755e01a
https://doi.org/10.1063/1.5126965
https://doi.org/10.1063/1.5126965