Výsledky vyhledávání

Autor: Hwang Ing-Shouh, Xiong Fulin, Eric Ganz, Jene Andrew Golovchenko, Silva K. Theiss

Publikováno v: Surface Science. 257:259-273

Tunneling microscopy, thermal desorption, Rutherford backscattering, and low-energy electron diffraction are used to study the structures and coverages of the phases of Pb on the Si(111)7 × 7 surface. For room-temperature deposition at low coverage

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25a4389a1b442c5e3cbf5b728694923b
https://doi.org/10.1016/0039-6028(91)90797-v

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Electronic Resource

Characterization and application of MeV ion implanted layers in III-V compound semiconductors.

Autor: Xiong, Fulin.

Publikováno v: Go to Characterization and application of MeV ion implanted layers in III-V compound semiconductors [electronic thesis].

Thesis (Ph. D.). UM #90-22,298.

Externí odkaz: http://resolver.caltech.edu/CaltechETD:etd-09232002-150110

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Dissertation/ Thesis

Characterization and application of MeV ion implanted layers in III-V compound semiconductors

Autor: Xiong, Fulin

Ion implantation at keV energies has become a well-established technique for surface modification of solid materials, especially semiconductors. The technique of MeV ion implantation has attracted considerable attention in recent years as it provides

Externí odkaz: https://thesis.library.caltech.edu/3716/1/Xiong_f_1990.pdf

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Lattice Disordering, Phase Transition, and Substrate Temperature Effects in MeV-ion-Implanted III-V Compound Semiconductors

Autor: Xiong, Fulin, Tsai, C. J., Vreeland, T., Tombrello, T. A.

An experimental study of lattice disordering, the crystalline-to-amorphous (c-a) phase transition, and substrate temperature effects in MeV-ion-implanted III-V compound semiconductor crystals is presented. A comparison has been made between the GaAs

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od________38::9dd2409d872b8515e06a5c155d91aa0b
https://resolver.caltech.edu/CaltechAUTHORS:20150826-102151546

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