Zobrazeno 1 - 10
of 95
pro vyhledávání: '"Xiong, Yucheng"'
Autor:
Sun, Jianshi, Li, Shouhang, Tong, Zhen, Shao, Cheng, Xie, Han, An, Meng, Zhang, Chuang, Zhu, Xiongfei, Huang, Chen, Xiong, Yucheng, Liu, Xiangjun
Accurately assessing the impact of electron-phonon interaction (EPI) on the lattice thermal conductivity of semiconductors is crucial for the thermal management of electronic devices and a unified physical understanding of this issue is highly desire
Externí odkaz:
http://arxiv.org/abs/2406.12187
Autor:
Sun, Jianshi, Li, Shouhang, Tong, Zhen, Shao, Cheng, An, Meng, Zhu, Xiongfei, Zhang, Chuang, Chen, Xiangchuan, Xiong, Yucheng, Frauenheim, Thomas, Liu, Xiangjun
4H-Silicon Carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by its low hole mobility. Herein, we found that the hole mobility of 4H-SiC is mainly lim
Externí odkaz:
http://arxiv.org/abs/2406.02874
Autor:
Sun, Jianshi, Liu, Xiangjun, Xiong, Yucheng, Yao, Yuhang, Yang, Xiaolong, Shao, Cheng, Li, Shouhang
Two-dimensional gallium nitride (2D-GaN) has great potential in power electronics and optoelectronics. Heat dissipation is a critical issue for these applications of 2D-GaN. Previous studies showed that higher-order phonon-phonon scattering has extre
Externí odkaz:
http://arxiv.org/abs/2403.03673
Autor:
Sun, Jianshi, Li, Shouhang, Tong, Zhen, Shao, Cheng, Chen, Xiangchuan, Liu, Qianqian, Xiong, Yucheng, An, Meng, Liu, Xiangjun
Wurtzite gallium nitride (GaN) has great potential for high-frequency and high-power applications due to its excellent electrical and thermal transport properties. However, enhancing the performance of GaN-based power electronics relies on heavy dopi
Externí odkaz:
http://arxiv.org/abs/2401.02133
Publikováno v:
In Advanced Engineering Informatics October 2024 62 Part B
Autor:
Liu, Qianqian, Liu, Xiangjun, Chen, Ge, Feng, Pei, Xiong, Yucheng, An, Meng, Shao, Cheng, Zhu, Xiongfei, Wang, Renzong, Sun, Jianshi, Sun, Jisheng, Guo, Chunfang, Bi, Siyi, Li, Shouhang
Publikováno v:
In Desalination 19 August 2024 583
Autor:
Wang, Renzong, Xiong, Yucheng, Yang, Juekuan, Liu, Zhichun, Li, Shouhang, Chen, Ge, Chen, Ke, Liu, Xiangjun
Publikováno v:
In Materials Today Physics June 2024 45
Publikováno v:
In Applied Thermal Engineering 1 May 2024 244
Publikováno v:
Journal of Applied Physics; 5/28/2024, Vol. 135 Issue 20, p1-11, 11p
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.