Zobrazeno 1 - 10
of 274
pro vyhledávání: '"Xinnan Lin"'
Autor:
Wei He, Jian Li, Zeliang Liao, Feng Lin, Junye Wu, Bing Wang, Maojun Wang, Nan Liu, Hsien-Chin Chiu, Hao-Chung Kuo, Xinnan Lin, Jingbo Li, Xinke Liu
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-10 (2022)
Abstract In this work, a vertical gallium nitride (GaN)-based trench MOSFET on 4-inch free-standing GaN substrate is presented with threshold voltage of 3.15 V, specific on-resistance of 1.93 mΩ·cm2, breakdown voltage of 1306 V, and figure of merit
Externí odkaz:
https://doaj.org/article/9ab735ceb4b144938449415f38e2892d
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 599-605 (2021)
N-channel thin film transistors (TFTs) fabricated with hydrogenated low temperature polycrystalline silicon (LTPS) were exposed to ultraviolet (UV) radiation to a cumulative dose up to 16 J/cm2. The effect of radiation on the electrical characteristi
Externí odkaz:
https://doaj.org/article/10d3419952814bcf9352fbfbb1613e2a
Autor:
Xuhui Chen, Huifang Hu, Xiaoqing Huang, Weiran Cai, Ming Liu, Chung Lam, Xinnan Lin, Lining Zhang, Mansun Chan
Publikováno v:
IEEE Access, Vol 8, Pp 95278-95287 (2020)
A phase change memory (PCM) model suitable for neuromorphic circuit simulations is developed. A crystallization ratio module is used to track the memory state in the SET process, and an active region radius module is developed to track the continuous
Externí odkaz:
https://doaj.org/article/e9e47bcbf34941ffb31ace0fd0dba13f
Autor:
Hong Cheng, Xinnan Lin
Publikováno v:
AIP Advances, Vol 11, Iss 8, Pp 085328-085328-7 (2021)
The electrical properties of p-channel low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) under deep ultraviolet (UV) irradiation were studied. Characteristics including threshold voltage (Vth), hole field effect mobility (μ
Externí odkaz:
https://doaj.org/article/bcf518b10f7b4a1bbfce46990501898f
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 291-297 (2018)
Different approaches to implement self-heating effects in a compact model are evaluated. The traditional approach using a subcircuit with the addition of an internal node can lead to significant increase in the simulation time. In contrast, by direct
Externí odkaz:
https://doaj.org/article/f10df73ded2b4b9f8713faf172088c32
Autor:
Mei Yuan, Yi-Ting Tseng, Po-Hsun Chen, Chih-Cheng Shih, Hui-Chun Huang, Ting-Chang Chang, Xiaole Cui, Xinnan Lin, Shengdong Zhang, Hang Zhou
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 627-632 (2018)
In conventional HfO2-based resistive random access memory (RRAM), SiO2 is usually adopted as side wall spacer (low-k spacer) to define the device feature size. It is found that the forming voltage of the conventional HfO2 RRAM with SiO2 spacer rises
Externí odkaz:
https://doaj.org/article/2a3a3df9e7fd42819a748ac0500399db
Publikováno v:
Nanomaterials, Vol 11, Iss 11, p 2945 (2021)
A robust simulation framework was developed for nanoscale phase change memory (PCM) cells. Starting from the reaction rate theory, the dynamic nucleation was simulated to capture the evolution of the cluster population. To accommodate the non-uniform
Externí odkaz:
https://doaj.org/article/88851080bed84e9e8f63781eeebfc8fb
Autor:
Panni Wang, Yihan Chen, Suwen Li, Salahuddin Raju, Longyan Wang, Lining Zhang, Xinnan Lin, Zhitang Song, Mansun Chan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 5, Pp 362-366 (2017)
Phase change memory (PCM) formed by Ge2Sb2Te5 (GST) on vertical carbon nanotube (CNT) filled contact plug is demonstrated in this paper. In order to achieve compatibility with the underlying process, the CNTs are synthesized using nickel catalyst at
Externí odkaz:
https://doaj.org/article/400a47fdc0a04e0eb4775f92cac7674b
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 6, Pp 447-451 (2015)
This paper presents a comparison analysis of carrier statistics on numerical simulations of MOSFET and tunneling FET (TFET). While the MOSFET current characteristics are not sensitive to the carrier statistic utilized in the simulation, a detailed an
Externí odkaz:
https://doaj.org/article/3c222b2b4d6148c79889e09f332d95ee
Publikováno v:
Neural Computing and Applications. 35:9593-9606
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bb9d23821021e7820a5ec7180c12952
https://doi.org/10.1007/s00521-022-08190-5
https://doi.org/10.1007/s00521-022-08190-5