Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Xingxuan Huang"'
Publikováno v:
IEEE Open Journal of Industry Applications, Vol 5, Pp 94-105 (2024)
This article presents a desat protection scheme with the ultrafast response for high-voltage (>3.3 kV) SiC MOSFETs. Its working principle is the same as the conventional desat protection designed for high-voltage SiC MOSFETs, yet its blanking time is
Externí odkaz:
https://doaj.org/article/fea111db159a4b5abaedd280a1463f35
Autor:
Ruirui Chen, Fei Wang, Leon M. Tolbert, Xingxuan Huang, Dingrui Li, Cheng Nie, Min Lin, Shiqi Ji, Li Zhang, James Everette Palmer, William Giewont
Publikováno v:
IEEE Access, Vol 10, Pp 73294-73308 (2022)
Distributed energy resources (DERs) and microgrids have seen tremendous growth and research activities in recent years. Flexible DERs and asynchronous microgrids (ASMG) can have many system-level benefits over fixed DERs and conventional microgrids.
Externí odkaz:
https://doaj.org/article/5af053bcc2d9473ebd3ed77fe9947099
Autor:
Xingxuan Huang, Shiqi Ji, Cheng Nie, Dingrui Li, Min Lin, Leon M. Tolbert, Fred Wang, William Giewont
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 3, Pp 36-50 (2022)
This paper comprehensively analyzes desaturation (desat) protection for high voltage (>3.3 kV) silicon carbide (SiC) MOSFETs and especially how to build in noise immunity under high dv/dt. This study establishes a solid foundation for understanding t
Externí odkaz:
https://doaj.org/article/a274aec6291446ecbd30fe8c9a73bdc1
Autor:
Jingjing Sun, Handong Gui, Jie Li, Xingxuan Huang, Nathan Strain, Daniel J. Costinett, Leon M. Tolbert
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 2, Pp 290-303 (2021)
The GaN-based critical conduction mode (CRM) totem-pole power factor correction (PFC) converter with full-line-cycle zero voltage switching (ZVS) is a promising candidate for high-efficiency front-end rectifiers. However, the input current can be deg
Externí odkaz:
https://doaj.org/article/e118a18ff1b745948f8b59fddde70199
Publikováno v:
2023 IEEE Applied Power Electronics Conference and Exposition (APEC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e718d633da503a0260a14ef9e472c2e
https://doi.org/10.1109/apec43580.2023.10131265
https://doi.org/10.1109/apec43580.2023.10131265
Autor:
Xingxuan Huang, William Giewont, James Palmer, Leon M. Tolbert, Li Zhang, Fei Fred Wang, Shiqi Ji, Shida Gu
Publikováno v:
IEEE Transactions on Industrial Electronics. 68:5712-5724
High-performance gate drive power supply (GDPS) plays a crucial role in ensuring the reliability and safety of the gate driver for power semiconductor devices. This article focuses on the design of a high-voltage-insulated GDPS for the 10-kV silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbbac445d7af24593d78581299c8a994
https://doi.org/10.1109/tie.2020.3000131
https://doi.org/10.1109/tie.2020.3000131
Publikováno v:
IEEE Transactions on Power Electronics. 36:1215-1219
The modular multilevel converter (MMC) is a popular topology in medium- and high-voltage applications, and many efforts have been spent on MMC modeling. However, the impact of submodule voltage sensor noise (SVSN), which becomes more severe due to in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a17e982581e842c36ecd4a667c892156
https://doi.org/10.1109/tpel.2020.3008524
https://doi.org/10.1109/tpel.2020.3008524
Autor:
Jie Li, Nathan N. Strain, Xingxuan Huang, Leon M. Tolbert, Handong Gui, Jingjing Sun, Daniel Costinett
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 2, Pp 290-303 (2021)
The GaN-based critical conduction mode (CRM) totem-pole power factor correction (PFC) converter with full-line-cycle zero voltage switching (ZVS) is a promising candidate for high-efficiency front-end rectifiers. However, the input current can be deg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72ef6d4a265ed6c1af7f761e7c3b29ef
https://ieeexplore.ieee.org/document/9397345/
https://ieeexplore.ieee.org/document/9397345/
Publikováno v:
IEEE Transactions on Power Electronics. 35:12533-12543
Using high voltage (HV) silicon carbide (SiC) power semiconductors in a modular multilevel converter (MMC) is promising because it results in fewer submodules and lower switching loss compared to conventional Si based solutions. The nearest level pul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c9c1164471e94ddb2a1c352f96b4806
https://doi.org/10.1109/tpel.2020.2987962
https://doi.org/10.1109/tpel.2020.2987962
Publikováno v:
2022 IEEE Applied Power Electronics Conference and Exposition (APEC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83a3da82b475af5bfed67056a6d58f53
https://doi.org/10.1109/apec43599.2022.9773432
https://doi.org/10.1109/apec43599.2022.9773432