Zobrazeno 1 - 10
of 104
pro vyhledávání: '"Xingwei Ding"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 121-126 (2024)
Al2O3, as one of the gate dielectric materials for thin film transistors (TFTs), has been extensively investigated because of its large bandgap, high breakdown field, and good thermal stability. However, the further development of Al2O3 thin films is
Externí odkaz:
https://doaj.org/article/7028297eb52d47229cd8ede1cc938862
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 152-156 (2020)
The high performance Hf doped ZnO (Hf-ZnO) flexible thin film transistors (TFTs) were fabricated using Ag NWs as gate electrode and high-k HfO2 as dielectric. The field effect mobility of Hf-ZnO is 14.7 cm2/Vs, Ion/Ioff ratio is more than 106, and th
Externí odkaz:
https://doaj.org/article/eae959eea75b4709a4e0aa1d975bddf1
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 885-889 (2020)
This work reports an alternative atomic layer deposition (ALD) method to fabricate ZnO thin-film transistors (TFTs). The ZnO film is deposited with temperature naturally-cooling process from 200 to 100°C, called a “temperature gradient ZnO (TG-ZnO
Externí odkaz:
https://doaj.org/article/bc1bc0b4c6fd4ffaa6028db1de49fac2
Publikováno v:
Nanomaterials, Vol 11, Iss 10, p 2552 (2021)
Solution-processed thin film transistors (TFTs) used in flexible electronics require them to be fabricated under low temperature. Ultraviolet (UV) treatment is an effective method to transform the solution precursors into dense semiconductor films. I
Externí odkaz:
https://doaj.org/article/1412dae7e23742129c28969f43b8cafe
Autor:
Yachen Xu, Huimin Chen, Haiyang Xu, Minyu Chen, Pengchao Zhou, Shuzhe Li, Ge Zhang, Wei Shi, Xuyong Yang, Xingwei Ding, Bin Wei
Publikováno v:
ACS Applied Materials & Interfaces. 15:16874-16881
Autor:
Lina, Dong, Yingzi, Ren, Wei, Zhang, Yu, Liu, Mingzhuo, Liu, Can, Hong, ManYu, Wang, Bowen, Zhan, Xingwei, Ding, Xiaolei, Wang
Publikováno v:
Biomaterials Science. 10:5318-5325
Pursuing painless and flexible blood glucose regulation has been a century-long arduous mission. The current therapeutic systems can only regulate blood glucose unidirectionally (reduce), and the adjustment range is large, which is prone to the risk
Autor:
Chuanxin Huang, Yunyun Liu, Dianguo Ma, Zhongkai Guo, Haiyun Yao, Kaikai Lv, Zhongjun Tian, Lanju Liang, Ju Gao, Xingwei Ding
Publikováno v:
Coatings; Volume 12; Issue 12; Pages: 1811
In this study, HfxAlyOz nanolaminate, single-layer Al2O3, and HfO2 gate insulators were fabricated by atomic layer deposition (ALD) to successfully integrate the InGaZnO (IGZO) thin-film transistors (TFTs). Compared with single-layer HfO2-based TFTs,
Enhanced Stability of Solution-Processed Indium–Zinc–Tin–Oxide Transistors by Tantalum Cation Doping
Autor:
Haiyang Xu, Pingping Li, Zihui Chen, Bing Yang, Bin Wei, Chaoying Fu, Xingwei Ding, Jianhua Zhang
Publikováno v:
Coatings; Volume 13; Issue 4; Pages: 767
Highly stable metal oxide thin film transistors (TFTs) are required in high-resolution displays and sensors. Here, we adopt a tantalum cation (Ta5+) doping method to improve the stability of zinc–tin–oxide (ZnSnO) TFTs. The results show that Ta5+
Publikováno v:
Coatings; Volume 13; Issue 3; Pages: 605
Indium oxide semiconductors, as one of the channel materials for thin film transistors (TFTs), have been extensively studied. However, the high carrier concentration and excess oxygen defects of intrinsic In2O3 can cause the devices to fail to work p
Publikováno v:
Journal of Materials Chemistry B. 9:6037-6043
To reduce the side effect of paclitaxel and enhance accumulation at the tumor site, a novel redox-responsive nanovector with excellent biocompatibility based on disulfide-linked amphiphilic polymer and magnetic nanoparticle was prepared. The system w