Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Xinguang Wu"'
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-18 (2024)
Abstract To deal with the highly nonlinear and time-varying characteristics of Batch Process, a model named adaptive stacking approximate kernel based broad learning system is proposed in this paper. This model innovatively introduces the approximate
Externí odkaz:
https://doaj.org/article/c36856a6013c4d6596fcf5dd8a1fa046
Hexahedral mesh is of great value in the analysis of mechanical structure, and the mesh quality has an important impact on the efficiency and accuracy of the analysis. This paper presents a quality improvement method for hexahedral meshes, which cons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a562c94740a8fc5ae837ce49c9345db9
https://doi.org/10.21203/rs.3.rs-586657/v1
https://doi.org/10.21203/rs.3.rs-586657/v1
Publikováno v:
SSRN Electronic Journal.
Publikováno v:
Clinical Laboratory. 63
Background At present, liquid conserved platelets (PLTs) can only be stored at 22°C for up to 5 days. Waste of outdated PLTs and short supply of fresh PLTs were both seen in blood banks. Lyophilized PLTs were considered as one of the candidate repla
Publikováno v:
Journal of Alloys and Compounds. 509:L344-L347
Screen printed Ba 0.6 Sr 0.4 TiO 3 (BST6/4) thick films were fabricated by reactive sintering at a low temperature below 900 °C. The dielectric properties in radio frequency range were measured on samples of sandwich structure MIM capacitors by impe
Publikováno v:
Ferroelectrics. 410:129-136
High-K HfO2-TiO2 ultra-thin films with sub-nanometer laminate HfO2/TiO2 stacks were deposited on p-type (100) silicon wafer using magnetron sputtering at 300°C. The as-deposited films are amorphous which could be sustained up to 900°C in air. The o
Publikováno v:
Ferroelectrics. 407:16-22
A new kind of microwave dielectric ceramics of BaxCu2−xP2O7 with low sintering temperature was prepared by solid state reaction method. The densified temperatures of the sintered samples are range from 850°C to 900 °C. The best microwave dielectr
Publikováno v:
Ferroelectrics. 406:10-15
The V-doped ZnO thin films were prepared on Pt/TiO2/SiO2/Si substrate by RF magnetron sputtering for piezoelectric device applications. X-ray diffraction study suggests that the sputtered ZnO thin films are grown in (0002)-preferred orientation, and
Publikováno v:
Journal of the European Ceramic Society. 29:1543-1546
The influence of B 2 O 3 –CuO addition on the sintering behavior, phase composition, microstructure and microwave dielectric properties of BiSbO 4 ceramic have been investigated. The BiSbO 4 ceramics can be well densified to approach above 95% theo
Publikováno v:
Journal of the American Ceramic Society. 95:1793-1795
A novel microwave dielectric ceramics of Zn3B2O6 for substrate application with low sintering temperature was synthesized by the solid-state reaction method. The sintering temperature ranges from 875°C to 950°C. The best microwave dielectric proper