Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Xinglong Shao"'
Autor:
Nuo Xu, Tae Gyun Park, Hae Jin Kim, Xinglong Shao, Kyung Jean Yoon, Tae Hyung Park, Liang Fang, Kyung Min Kim, Cheol Seong Hwang
Publikováno v:
Advanced Intelligent Systems, Vol 2, Iss 1, Pp n/a-n/a (2020)
Stateful logic enables highly energy‐efficient computation because the time and energy consumption for data transfer between the memory and the processing units in the traditional computation system can significantly be saved due to the combined fu
Externí odkaz:
https://doaj.org/article/ef9a4381111f4d60b13298457413979d
Autor:
Tae Gyun Park, Tae Hyung Park, Kyung Jean Yoon, Nuo Xu, Kyung-min Kim, Cheol Seong Hwang, Hae Jin Kim, Liang Fang, Xinglong Shao
Publikováno v:
Advanced Intelligent Systems, Vol 2, Iss 1, Pp n/a-n/a (2020)
Stateful logic enables highly energy‐efficient computation because the time and energy consumption for data transfer between the memory and the processing units in the traditional computation system can significantly be saved due to the combined fu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3ada48d6c06fa1bf5b5d3086cd7beeb
https://doaj.org/article/ef9a4381111f4d60b13298457413979d
https://doaj.org/article/ef9a4381111f4d60b13298457413979d
Publikováno v:
2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM).
By combining the functionalities of Boolean gates and non-volatile memory, stateful logic may enable significant savings in time and energy for computational processes where available power source is limited. In this talk, fundamental principles of s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0afe3e6a9ccaccb56712ecb4938cef92
https://doi.org/10.1109/edtm.2017.7947501
https://doi.org/10.1109/edtm.2017.7947501
Autor:
Xinglong Shao, Kyung-min Kim, Hae Jin Kim, Kyung Jean Yoon, Cheol Seong Hwang, R. Stanley Williams, Nuo Xu
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 13:1800629
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ea99a59e798575767e4fc32048b446e
https://doi.org/10.1002/pssr.201800629
https://doi.org/10.1002/pssr.201800629
Autor:
Young Jae Kwon, Xinglong Shao, Tae Hyung Park, Jun Yeong Seok, Seul Ji Song, Jung Ho Yoon, Dae Eun Kwon, Kyung-min Kim, Kyung Jean Yoon, Cheol Seong Hwang
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 27(25)
Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory with a new circuit design is presented as a feasible candidate to succeed multilevel-cell (MLC) NAND flash memory. This device has the following characteristics: 3 bit MLC, electroforming-free, self-r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::034fab14ad5e28265bde4ec4fd5d1a34
https://pubmed.ncbi.nlm.nih.gov/25973913
https://pubmed.ncbi.nlm.nih.gov/25973913
Autor:
Jung Ho Yoon, Kyung Min Kim, Seul Ji Song, Jun Yeong Seok, Kyung Jean Yoon, Dae Eun Kwon, Tae Hyung Park, Young Jae Kwon, Xinglong Shao, Cheol Seong Hwang
Publikováno v:
Advanced Materials; Jul2015, Vol. 27 Issue 25, p3811-3816, 6p